Browsing by author "Firrincieli, Andrea"
Now showing items 1-20 of 36
-
6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Merckling, Clement; Alian, AliReza; Firrincieli, Andrea; Jiang, Sijia; Cantoro, Mirco; Dekoster, Johan; Caymax, Matty; Heyns, Marc (2012) -
A 16384-electrode 1024-channel multimodal CMOS MEA for high-throughput intracellular action potential measurements and impedance spectroscopy in drug-screening applications
Mora Lopez, Carolina; Chun, Ho Sung; Berti, Laurent; Wang, Shiwei; Putzeys, Jan; Van Den Bulcke, Carl; Weijers, Jan-Willem; Firrincieli, Andrea; Reumers, Veerle; Braeken, Dries; Van Helleputte, Nick (2018) -
A multimodal CMOS MEA for high-throughput intracellular action potential measurements and impedance spectroscopy in drug-screening applications
Mora Lopez, Carolina; Chun, Ho Sung; Wang, Shiwei; Berti, Laurent; Putzeys, Jan; Van Den Bulcke, Carl; Weijers, Jan-Willem; Firrincieli, Andrea; Reumers, Veerle; Braeken, Dries; Van Helleputte, Nick (2018) -
A versatile LPCVD silicon nitride platform for heterogenous photonic circuits: Ultra tight thickness control and low propagation loss
Helin, Philippe; Firrincieli, Andrea; Ray Chaudhuri, Ashesh; Pham, Nga; Lenci, Silvia; Mannarino, Manuel; Osman, Haris (2019) -
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, AliReza; Brammertz, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, Dennis; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2011) -
Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2013-09) -
Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2014) -
Characterization of Al/Ti and NiGe ohmic contacts to n-type GeSn CVD-grown layers
Firrincieli, Andrea; Gupta, Suyog; Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Simoen, Eddy; Vandervorst, Wilfried; Claeys, Cor; Saraswat, K.; Kittl, Jorge (2012) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011) -
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Martens, Koen; Rooyackers, Rita; Firrincieli, Andrea; Vincent, Benjamin; Loo, Roger; De Jaeger, Brice; Meuris, Marc; Favia, Paola; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried; Simoen, Eddy; Jurczak, Gosia; Wouters, Dirk; Kittl, Jorge (2011) -
Contact technology for the on-chip integration of Ge and III-V compounds for advanced microelectronics applications
Firrincieli, Andrea (2014-07) -
Contact technology schemes for advanced Ge and III-V CMOS technologies
Claeys, Cor; Firrincieli, Andrea; Martens, Koen; Kittl, Jorge; Simoen, Eddy (2012) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
FITEP: a flexible implantable thin electronic package platform for long tem implatation applications, based on polymer and ceramic ALD multilayers
Op de Beeck, Maaike; Verplancke, Rik; Schaubroeck, David; Li, Changzheng; Cuypers, Dieter; Cauwe, Maarten; Vandecasteele, Bjorn; Mader, Lothar; Vanhaverbeke, Celine; O'Callaghan, John; Braeken, Dries; Andrei, Alexandru; Firrincieli, Andrea; Ballini, Marco; Kundu, Aritra; Fahmy, Ahmed; Patrick, Erin; Maghari, Nima; Bashirullah, Rizwan; De Baets, Johan (2019) -
Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
Vincent, Benjamin; Firrincieli, Andrea; Waldron, Niamh; Wang, W.-E.; Franquet, Alexis; Douhard, Bastien; Bender, Hugo; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty (2011) -
Ge chemical vapor deposition on GaAs for low resistivity contacts
Vincent, Benjamin; Firrincieli, Andrea; Wang, Wei-E; Waldron, Niamh; Franquet, Alexis; Douhard, Bastien; Vandervorst, Wilfried; Clarysse, Trudo; Brammertz, Guy; Loo, Roger; Dekoster, Johan; Meuris, Marc; Caymax, Matty (2011) -
GeSn channel nMOSFETs: material potential and technological outlook
Gupta, Somya; Vincent, Benjamin; Lin, Dennis; Gunji, M.; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Kope, B.; Yang, B.; Douhard, Bastien; Delmotte, Joris; Franquet, Alexis; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K.C. (2012) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2013) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2014) -
Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
Waldron, Niamh; Nguyen, Duy; Lin, Dennis; Brammertz, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderickx, Gillis; Sioncke, Sonja; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Meuris, Marc; Absil, Philippe; Hoffmann, Thomas Y. (2011)