Browsing by author "Krom, Raymond"
Now showing items 1-19 of 19
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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
Characterization of voltage and frequency dependent parasitics observed in Si passivated germanium metal gate pMOSFETs
Krom, Raymond; Mitard, Jerome; Plourde, Chelsea; De Jaeger, Brice; Meuris, Marc; Heyns, Marc (2008) -
Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Martens, Koen; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Electrical TCAD simulation of a germanium pMOSFET technology
Hellings, Geert; Eneman, Geert; Krom, Raymond; De Jaeger, Brice; Mitard, Jerome; De Keersgieter, An; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2010) -
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011) -
High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Eneman, Geert; Yamaguchi, Shinpei; Ortolland, Claude; Takeoka, Shinji; Witters, Liesbeth; Chiarella, Thomas; Favia, Paola; Hikavyy, Andriy; Mitard, Jerome; Kobayashi, M.; Krom, Raymond; Bender, Hugo; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Loo, Roger; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Hellings, Geert; Witters, Liesbeth; Krom, Raymond; Mitard, Jerome; Hikavyy, Andriy; Loo, Roger; Schulze, Andreas; Eneman, Geert; Kerner, Christoph; Franco, Jacopo; Chiarella, Thomas; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Heyns, Marc; De Meyer, Kristin; Meuris, Marc; Hoffmann, Thomas Y. (2010) -
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
Romeo, Tommaso; Pantisano, Luigi; Simoen, Eddy; Krom, Raymond; Togo, Mitsuhiro; Horiguchi, Naoto; Mitard, Jerome; Thean, Aaron; Groeseneken, Guido; Claeys, Cor; Crupi, Felice (2012) -
Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation
Cho, Moon Ju; Ritzenthaler, Romain; Krom, Raymond; Higuchi, Yuichi; Kaczer, Ben; Chiarella, Thomas; Boccardi, Guillaume; Togo, Mitsuhiro; Horiguchi, Naoto; Kauerauf, Thomas; Groeseneken, Guido (2013) -
On the importance of source/drain series resistance in implant-free SiGe quantum well FETs
Krom, Raymond; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Hikavyy, Andriy; Eneman, Geert; Waldron, Niamh; Heyns, Marc; Hoffmann, Thomas Y.; De Meyer, Kristin (2011) -
On the Rseries extraction techniques for sub-22nm CMOS Finfet and SiGe technologies
Pantisano, Luigi; Zschaetzsch, Gerd; Hellings, Geert; Krom, Raymond; Lee, Si Hyung; Ritzenthaler, Romain; Mitard, Jerome; Eneman, Geert; Roussel, Philippe; Chiarella, Thomas; Ragnarsson, Lars-Ake; Togo, Mitsuhiro; Vandervorst, Wilfried; Groeseneken, Guido; Thean, Aaron; Horiguchi, Naoto (2012) -
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Togo, Mitsuhiro; Lee, Jae Woo; Pantisano, Luigi; Chiarella, Thomas; Ritzenthaler, Romain; Krom, Raymond; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Brus, Stephan; Maes, J.W.; Machkaoutsan, Vladimir; Tolle, J.; Eneman, Geert; De Keersgieter, An; Boccardi, Guillaume; Mannaert, Geert; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain
Hellings, Geert; Mitard, Jerome; Krom, Raymond; Witters, Liesbeth; Eneman, Geert; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Hoffmann, Thomas Y.; De Meyer, Kristin (2011) -
Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Eneman, Geert; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Yamaguchi, Shinpei; Garcia Bardon, Marie; Christie, Phillip; Ortolland, Claude; Hikavyy, Andriy; Favia, Paola; Bargallo Gonzalez, Mireia; Simoen, Eddy; Crupi, Felice; Kobayashi, Masaharu; Franco, Jacopo; Takeoka, Shinji; Krom, Raymond; Bender, Hugo; Loo, Roger; Claeys, Cor; De Meyer, Kristin; Hoffmann, Thomas Y. (2011) -
The implant-free quantum well field-effect-transistor: Harnessing the power of heterostructures
Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas Y.; De Meyer, Kristin (2011) -
The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures
Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Schulze, Andreas; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas; De Meyer, Kristin (2012)