Browsing by author "Merckling, Clement"
Now showing items 1-20 of 217
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3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Merckling, Clement; Alian, AliReza; Firrincieli, Andrea; Jiang, Sijia; Cantoro, Mirco; Dekoster, Johan; Caymax, Matty; Heyns, Marc (2012) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
AC transconductance dispersion (ACGD): a method to profile oxide traps in MOSFETs without body contact
Sun, Xiao; Cui, Sharon; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Lin, Dennis; Ma, T.P. (2012) -
Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers
Molle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; dimoulas, A.; Brammertz, Guy; Merckling, Clement; Caymax, Matty (2011) -
Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure
Fleischmann, Claudia; Schouteden, K.; Merckling, Clement; Sioncke, Sonja; Meuris, Marc; Van Haesendonck, C.; Temst, K.; Vantomme, A. (2012) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface
Fusi, Matteo; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; Brammertz, Guy; Merckling, Clement; Meuris, Marc; Molle, Alessandro (2011) -
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, AliReza; Brammertz, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, Dennis; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2011) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
An ultra-short InP nanowire laser monolithic integrated on (001) silicon substrate
Wang, Zhechao; Tian, Bin; Paladugu, Mohan; Pantouvaki, Marianna; Merckling, Clement; Guo, Weiming; Dekoster, Johan; Caymax, Matty; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2013) -
Analysis of border traps in high-k gate dielectrics on high-mobility channels
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
Afanasiev, Valeri; Chou, H. C.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Hsu, Brent; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Alian, AliReza; Langer, Robert; Collaert, Nadine; Heyns, Marc (2018) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Border traps in Ge/III-V channel devices: Analysis and reliability aspects
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013)