Browsing by author "Merckling, Clement"
Now showing items 21-40 of 213
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Capacitance-voltage (CV) characterization of GaAs-oxide interfaces
Brammertz, Guy; Martens, Koen; Lin, Dennis; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage (CV) characterization of GaAs/high-k oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Merckling, Clement; Penaud, J.; Alian, AliReza; Sioncke, Sonja; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2008) -
Capacitance-voltage (CV)characterization of GaAs-oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage characterization of GaAs-Oxide interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characterization of InP growth in nm-sized trenches by a combination of NC-AFM and STM
Mannarino, Manuel; Eyben, Pierre; Chintala, Ravi Chandra; Merckling, Clement; van Dorp, Dennis; Vandervorst, Wilfried (2014) -
Composition analysis of III-V materials grown in nanostructures for semiconductor applications: the self focusing SIMS approach
Franquet, Alexis; Douhard, Bastien; Merckling, Clement; Conard, Thierry; Vandervorst, Wilfried (2015) -
Composition measurements of thin films beyond the spatial resolution of SIMS
Franquet, Alexis; Douhard, Bastien; Delmotte, Joris; Merckling, Clement; Conard, Thierry; Vandervorst, Wilfried (2013) -
Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si
Favia, Paola; Richard, Olivier; Geypen, Jef; Waldron, Niamh; Merckling, Clement; Guo, Weiming; Caymax, Matty; Bender, Hugo (2013) -
Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers
Hsu, Mark; Van Thourhout, Dries; Pantouvaki, Marianna; Meersschaut, Johan; Conard, Thierry; Richard, Olivier; Bender, Hugo; Favia, Paola; Vila Santos, Maria; Cid Barreno, Rosalia; Rubio-Zuazo, Juan; R. Castro, German; Van Campenhout, Joris; Absil, Philippe; Merckling, Clement (2017-05) -
Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy
Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, Maria; Juan, Rubio-Zuazo; German, Castro; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc (2017) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers
Simoen, Eddy; Vincent, Benjamin; Merckling, Clement; Gencarelli, Federica; Chu, L-K; Loo, Roger (2012) -
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Merckling, Clement; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, Guy; Scarrozza, Marco; Pourtois, Geoffrey; Kwo, J.; Hong, M.; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011) -
Defect distribution in InP epitaxially grown in nano-trenches on off-axis Si substrates
Bender, Hugo; Richard, Olivier; Jiang, Sijia; Merckling, Clement; Loo, Roger; Caymax, Matty (2012) -
Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014) -
Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Gupta, Somya; Simoen, Eddy; Loo, Roger; Madia, Oreste; Lin, Dennis; Merckling, Clement; Shimura, Yosuke; Conard, Thierry; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc (2016-05) -
Design of thin film stacks for non-destructive electro-optical characterizations by spectroscopic ellipsometry
Hsu, Mark; Pantouvaki, Marianna; Merckling, Clement; Marinelli, Antonio; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2016) -
Device assessment of electrically active defects in high-mobility materials
Claeys, Cor; Simoen, Eddy; Eneman, Geert; Ni, Kai; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Caymax, Matty (2016)