Browsing by author "Kuboyama, S."
Now showing items 1-16 of 16
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Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes
Ohyama, H.; Takakura, K.; Hayama, K.; Kuboyama, S.; Deguchi, Y.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2003) -
Degradation and their recovery behavior of irradiated GaAlAs LEDs
Ohyama, H.; Takakura, K.; Nagano, T.; Hanada, M.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2008) -
Degradation of SiC-MESFETs by irradiation
Ohyama, H.; Takakura, K.; Uemura, K.; Shigaki, K.; Kudou, T.; Matsumoto, T.; Arai, M.; Kuboyama, S.; Kamezawa, C.; Simoen, Eddy; Claeys, Cor (2008) -
Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
Hayama, K.; Rafi, J.M.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Kuboyama, S.; Oka, K.; Matsuda, S. (2004) -
Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Hayama, K.; Takakura, K.; Ohyama, H.; Kuboyama, S.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2007) -
Effect of gate interface on performance degration of irradiated SiC-MESFET
Ohyama, H.; Takakura, K.; Yoneoka, M.; Uemura, K.; Motoki, M.; Matsuo, K.; Arai, M.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2007) -
Effects of electron and proton radiation on embedded SiGe source/drain diodes
Ohyama, H.; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, M.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2008) -
Effects of electron irradiation on SiGe devices
Ohyama, Hidenori; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Kuboyama, S.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010) -
Performance degradation mechanism of irradiated GaAlAs LED
Ohyama, H.; Takakura, K.; Shitogiden, H.; Motoki, M.; Matsuo, K.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2007) -
Radiation damage of Ge diodes and MOSFETs on Ge-on-Si substrates
Nakamura, H.; Nagano, T.; Sukizaki, H.; Sakamoto, K.; Takakura, K.; Ohyama, H.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage of Ge-on-Si devices
Ohyama, H.; Sakamoto, K.; Sukizaki, H.; Takakura, K.; Hayama, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage of Si photodiodes by high-temperature irradiation
Ohyama, H.; Takakura, K.; Shigaki, K.; Kuboyama, S.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2003) -
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation
Ohyama, H.; Shitogiden, H.; Takakura, K.; Shigaki, K.; Kuboyama, S.; Kamesawa, C.; Simoen, Eddy; Claeys, Cor (2008) -
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs
Hayama, K.; Takakura, T.; Ohyama, H.; Kuboyama, S.; Matsuda, S.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs
Hayama, K.; Ohyama, H.; Takakura, K.; Kuboyama, S.; Jono, T.; Oka, K.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2004) -
Radiaton damage of SiC Schotttky diodes by electron irradiation
Ohyama, H.; Takakura, K.; Watanabe, T.; Nishiyama, K.; Shigaki, K.; Kudou, T.; Nakabayashi, M.; Kuboyama, S.; Matsuda, S.; Kamezawa, C.; Simoen, Eddy; Claeys, Cor (2005)