Browsing by author "Leys, Frederik"
Now showing items 21-40 of 75
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Epitaxy solutions for Ge MOS technology
Leys, Frederik; Bonzom, Renaud; Loo, Roger; Richard, Olivier; De Jaeger, Brice; Van Steenbergen, Jan; Dessein, Kristof; Conard, Thierry; Rip, Jens; Bender, Hugo; Vandervorst, Wilfried; Meuris, Marc; Caymax, Matty (2005) -
Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008) -
Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008) -
Experimental and theoretical study of Ge surface passivation
Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; De Jaeger, Brice; Leys, Frederik; Nelis, Daniel; Paredis, Kristof; Vantomme, Andre; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Gatestacks for scalable high-performance FinFETs
Vellianitis, Georgios; Van Dal, Mark; Witters, Liesbeth; Curatola, Gilberto; Doornbos, Gerben; Collaert, Nadine; Jonville, C.; Torregiani, Cristina; Lai, Li-Shyue; Petry, Jasmine; Pawlak, Bartek; Duffy, Ray; Demand, Marc; Beckx, Stephan; Mertens, Sofie; Delabie, Annelies; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Voogt, F.; Roberts, H.; Donnet, D.; Biesemans, Serge; Jurczak, Gosia; Lander, Rob (2007) -
Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference
De Jaeger, Brice; Kaczer, Ben; Zimmerman, Paul; Opsomer, Karl; Winderickx, Gillis; Van Steenbergen, Jan; Van Moorhem, Els; Terzieva, Valentina; Bonzom, Renaud; Leys, Frederik; Arena, Chantal; Bauer, Matthias; Werkhoven, Chris; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-01) -
Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates
Meuris, Marc; De Jaeger, Brice; Van Steenbergen, Jan; Bonzom, Renaud; Caymax, Matty; Houssa, Michel; Kaczer, Ben; Leys, Frederik; Martens, Koen; Opsomer, Karl; Pourghaderi, Mohammad Ali; Satta, Alessandra; Simoen, Eddy; Terzieva, Valentina; Van Moorhem, Els; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Delabie, Annelies; Hellin, David; Janssens, Tom; Onsia, Bart; Sioncke, Sonja; Mertens, Paul; Snow, Jim; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David; Raskin, G.; Letertre, F.; Akatsu, T.; Billon, T.; Heyns, Marc (2007) -
Germanium MOSFET devices: advances in materials understanding, process development, and electrical performance
Brunco, David; De Jaeger, Brice; Eneman, Geert; Mitard, Jerome; Hellings, Geert; Satta, Alessandra; Terzieva, Valentina; Souriau, Laurent; Leys, Frederik; Pourtois, Geoffrey; Houssa, Michel; Winderickx, Gillis; Vrancken, Evi; Sioncke, Sonja; Opsomer, Karl; Nicholas, Gareth; Caymax, Matty; Stesmans, Andre; Van Steenbergen, Jan; Mertens, Paul; Meuris, Marc; Heyns, Marc (2008) -
Germanium: the past and possibly a future material for microelectronics
Brunco, David; De Jaeger, Brice; Eneman, Geert; Satta, Alessandra; Terzieva, Valentina; Souriau, Laurent; Leys, Frederik; Pourtois, Geoffrey; Houssa, Michel; Opsomer, Karl; Nicholas, Gareth; Meuris, Marc; Heyns, Marc (2007) -
Growth kinetics and relaxation mechanism of very thin epitaxial Si films on (100) germanium
Bonzom, Renaud; Leys, Frederik; Loo, Roger; Richard, Olivier; Vanhaeren, Danielle; Rip, Jens; Van Steenbergen, Jan; De Jaeger, Brice; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Meuris, Marc (2005) -
Growth kinetics of germanium on (100) germanium by pyrolysis of germane
Bonzom, Renaud; Leys, Frederik; Loo, Roger; Dessein, Kristof; Vandervorst, Wilfried; Caymax, Matty (2005) -
High accuracy moisture measurements at high temperature and low pressure: a comparative analysis of the ASM Epsilon3200 and the Epsilon2000
Leys, Frederik; Hikavyy, Andriy; De Vos, Brecht; Loo, Roger; Caymax, Matty (2007) -
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Van Dal, Mark; Collaert, Nadine; Doornbos, Gerben; Vellianitis, Georgios; Curatola, Gilberto; Pawlak, Bartek; Duffy, Ray; Jonville, Carole; Degroote, Bart; Altamirano Sanchez, Efrain; Kunnen, Eddy; Demand, Marc; Beckx, Stephan; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Biesemans, Serge; Jurczak, Gosia; Kottantharayil, Anil; Witters, Liesbeth; Lander, Rob (2007) -
Impact of advanced process modules and device architectures on the matching performance of (sub-)45nm CMOS
Gustin, Cedric; Mercha, Abdelkarim; Loo, Josine; Parvais, Bertrand; Subramanian, Vaidy; Dehan, Morin; Veloso, Anabela; Hoffmann, Thomas Y.; Leys, Frederik; Decoutere, Stefaan (2007-04) -
Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
Mitard, Jerome; Shea, C.; De Jaeger, Brice; Pristera, Andrea; Wang, Gang; Houssa, Michel; Eneman, Geert; Hellings, Geert; Wang, Wei-E; Lin, J.C.; Leys, Frederik; Loo, Roger; Winderickx, Gillis; Vrancken, Evi; Stesmans, Andre; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Meuris, Marc; Heyns, Marc (2009) -
Impact of Epi-Si growth temperature on Ge-pFET performance
Mitard, Jerome; Martens, Koen; De Jaeger, Brice; Franco, Jacopo; Shea, Chris; Plourde, Chelsea; Leys, Frederik; Loo, Roger; Hellings, Geert; Eneman, Geert; Wang, Wei-E; Lin, Vic; Kaczer, Ben; De Meyer, Kristin; Hoffmann, Thomas Y.; De Gendt, Stefan; Caymax, Matty; Meuris, Marc; Heyns, Marc (2009-09) -
Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs
Martens, Koen; Mitard, Jerome; Leys, Frederik; De Jaeger, Brice; Caymax, Matty; Meuris, Marc; Kaczer, Ben; Groeseneken, Guido; Maes, Herman (2008) -
Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Vissouvanadin Soubaretty, Bertrand; Thomas, Nicole; Taleb, Nadjib; Verheyen, Peter; Hikavyy, Andriy; Leys, Frederik; Richard, Olivier; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P; Wise, R. (2007) -
Influence of extensions implantation on selective epitaxial growth of Si used for production of FINFET raised source/drains
Hikavyy, Andriy; Collaert, Nadine; Rooyackers, Rita; Leys, Frederik; Loo, Roger (2008)