Browsing by author "Boccardi, Guillaume"
Now showing items 21-40 of 55
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IGZO integration scheme for enabling IGZO nFETs
Kljucar, Luka; Mitard, Jerome; Rassoul, Nouredine; Dekkers, Harold; Steudel, Soeren; del Agua Borniquel, Jose Ignacio; De Wachter, Bart; Teugels, Lieve; Tsvetanova, Diana; Devriendt, Katia; Grisin, Ilja; Boccardi, Guillaume; Hody, Hubert; Nag, Manoj; Di Piazza, Luca; Wilson, Chris; Kar, Gouri Sankar; Tokei, Zsolt; Ramalingam, J.; Cao, Yong; Diehl, Daniel L. (2019) -
III-V fin patterning in SADP scheme
Milenin, Alexey; Camerotto, Elisabeth; Sun, Noel; Boccardi, Guillaume; Vertommen, Johan; Piumi, Daniele (2016) -
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V on a Si platform for the next generations of communication systems
Parvais, Bertrand; Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Boccardi, Guillaume; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V/III-N technologies for next generation high-capacity wireless communication
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Boccardi, Guillaume; Cardinael, Pieter; Chauhan, Vikas; Desset, Claude; ElKashlan, Rana Y.; Khaled, Ahmad; Ingels, Mark; Kunert, Bernardette; Mols, Yves; O'Sullivan, Barry; Peralagu, Uthayasankaran; Pinho, Nelson; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Sinha, Siddhartha; Sun, Xiao; Vais, Abhitosh; Vermeersch, Bjorn; Yadav, Sachin; Yan, Dongyang; Yu, Hao; Zhang, Yang; Zhao, Ming; Van Driessche, Veerle; Gramegna, Giuseppe; Wambacq, Piet; Parvais, Bertrand; Peeters, Michael (2022) -
Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process
Cho, Moon Ju; Arimura, Hiroaki; Lee, Jae Woo; Kaczer, Ben; Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Kauerauf, Thomas; Horiguchi, Naoto; Groeseneken, Guido (2014-03) -
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Sasaki, Yuichiro; Godet, Ludovic; Chiarella, Thomas; Brunco, David; Rockwell, Tyler; Lee, Jae Woo; Colombeau, Benjamin; Togo, Mitsuhiro; Chew, Soon Aik; Zschaetzsch, Gerd; Noh, Kyung Bong; De Keersgieter, An; Boccardi, Guillaume; Kim, Min-Soo; Hellings, Geert; Martin, Patrick; Vandervorst, Wilfried; Thean, Aaron; Horiguchi, Naoto (2013) -
Improving defectivity for III-V CMP processes for < 10 NM technology nodes
Teugels, Lieve; Ong, Patrick; Waldron, Niamh; Boccardi, Guillaume; Usman Ibrahim, Ansar; Siebert, Max; Leunissen, Leonardus (2014) -
Improving defectivity for III-V CMP processes for <10 nm technology nodes
Teugels, Lieve; Ong, Patrick; Boccardi, Guillaume; Waldron, Niamh; Usman Ibrahim, Ansar; Siebert, Joerg Max; Leunissen, Leonardus A.H. (2014) -
Integration challenges and options of replacement high-k/metal gate technology for (Sub-)22nm technology nodes
Veloso, Anabela; Ragnarsson, Lars-Ake; Schram, Tom; Chew, Soon Aik; Boccardi, Guillaume; Thean, Aaron; Horiguchi, Naoto (2013) -
Low frequency noise analysis for post-treatment of replacement metal gate FinFET
Lee, Jae Woo; Simoen, Eddy; Veloso, Anabela; Cho, Moon Ju; Arimura, Hiroaki; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Chiarella, Thomas; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013) -
Low-frequency noise characterization of germanium n-channel finFETs
Oliveira, Alberto; Arimura, Hiroaki; Boccardi, Guillaume; Collaert, Nadine; Claeys, Cor; Horiguchi, Naoto; Simoen, Eddy (2020) -
Monolithic integration of III-V semiconductors by selective area growth on Si(001) substrate: epitaxy challenges & applications
Merckling, Clement; Jiang, Sijia; Liu, Ziyang; Waldron, Niamh; Boccardi, Guillaume; Rooyackers, Rita; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Collaert, Nadine; Van Campenhout, Joris; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron (2015) -
Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
Mols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar Kodandarama, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette (2021-09-29) -
N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices
Petry, Jasmine; Boccardi, Guillaume; Xiong, K.; Mueller, Markus; Hooker, Jacob; Singanamalla, Raghunath; Collaert, Nadine; De Meyer, Kristin (2008) -
Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation
Cho, Moon Ju; Ritzenthaler, Romain; Krom, Raymond; Higuchi, Yuichi; Kaczer, Ben; Chiarella, Thomas; Boccardi, Guillaume; Togo, Mitsuhiro; Horiguchi, Naoto; Kauerauf, Thomas; Groeseneken, Guido (2013) -
Novel gate stack engineering for high mobility Ge nFETs
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Wostyn, Kurt; Boccardi, Guillaume; Franco, Jacopo; Sioncke, Sonja; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Chiu, Eddie; Mitard, Jerome; Mocuta, Dan; Collaert, Nadine (2018) -
Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability
Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Dekkers, Harold; Loo, Roger; Mitard, Jerome; Ragnarsson, Lars-Ake; Wostyn, Kurt; Boccardi, Guillaume; Chiu, Eddie; Subirats, Alexandre; Favia, Paola; Vancoille, Eric; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2017) -
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Togo, Mitsuhiro; Lee, Jae Woo; Pantisano, Luigi; Chiarella, Thomas; Ritzenthaler, Romain; Krom, Raymond; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Brus, Stephan; Maes, J.W.; Machkaoutsan, Vladimir; Tolle, J.; Eneman, Geert; De Keersgieter, An; Boccardi, Guillaume; Mannaert, Geert; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Plasma doping and reduced crystalline damage for conformally doped fin feld effect transistors
Lee, Jae Woo; Sasaki, Yuichiro; Cho, Moon Ju; Boccardi, Guillaume; Ritzenthaler, Romain; Eneman, Geert; Chiarella, Thomas; Brus, Stephan; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2013)