Browsing by author "Thean, Aaron"
Now showing items 21-40 of 380
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Advanced semiconductor devices for future CMOS technologies
Claeys, Cor; Chiappe, Daniele; Collaert, Nadine; Mitard, Jerome; Radu, Iuliana; Rooyackers, Rita; Simoen, Eddy; Vandooren, Anne; Veloso, Anabela; Waldron, Niamh; Witters, Liesbeth; Thean, Aaron (2015) -
Al-induced defect generation in cubic phase HfO2/SiO2/Si gate stacks
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Adelmann, Christoph; Degraeve, Robin; Schram, Tom; Chew, Soon Aik; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2012) -
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism
Dalle Valle Martino, Marcio; Neves Souza, Felipe; Ghedini der Agopian, Paula; Martino, Joao Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures
Bordallo, Caio; Martino, Joao A.; Agopian, Paula; Rooyackers, Rita; Vandooren, Anne; Thean, Aaron; Simoen, Eddy; Claeys, Cor (2015) -
Analysis of dopant diffusion and defects in fin structure using an atoministic kinetic Monte Carlo approach
Noda, Taiji; Kambham, Ajay; Vrancken, Christa; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2013) -
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Vrancken, Christa; Eyben, Pierre; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2012) -
Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
Toledano Luque, Maria; Kaczer, Ben; Aoulaiche, Marc; Spessot, Alessio; Roussel, Philippe; Ritzenthaler, Romain; Schram, Tom; Thean, Aaron; Groeseneken, Guido (2013) -
Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
Toledano Luque, Maria; Kaczer, Ben; Aoulaiche, Marc; Spessot, Alessio; Roussel, Philippe; Ritzenthaler, Romain; Schram, Tom; Thean, Aaron; Groeseneken, Guido (2013) -
Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models
Betti Beneventi, G.; Reggiani, S.; Gnudi, A.; Gnani, E.; Alian, AliReza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, G. (2015) -
Area and routing efficiency of SWD circuits compared to advanced CMOS
Zografos, Odysseas; Raghavan, Praveen; Sherazi, Yasser; Vaysset, Adrien; Ciubotaru, Florin; Soree, Bart; Lauwereins, Rudy; Radu, Iuliana; Thean, Aaron (2015) -
Assessment of SiGe quantum well transistors for DRAM peripheral applications
Ritzenthaler, Romain; Schram, Tom; Eneman, Geert; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Atomic layer deposition of 2D transition metal dichalogenides
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Haesevoets, Karel; Meersschaut, Johan; Nuytten, Thomas; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Heyns, Marc; Barla, Kathy; Radu, Iuliana; Thean, Aaron (2015-10) -
Band offsets in biaxially stressed SiGe layers for arbitrary orientations
Eneman, Geert; Roussel, Philippe; Brunco, David; Collaert, Nadine; Mocuta, Anda; Thean, Aaron (2016) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
Band-to-band tunneling off-state leakage in Ge fins and nanowires: effect of quantum confinement
Eneman, Geert; Verhulst, Anne; Smith, Lee; Moroz, Victor; De Keersgieter, An; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016) -
Benchmarking of MoS2 FETs with multigate Si-FET options for 5 nm and beyond
Agarwal Kumar, Tarun; Yakimets, Dmitry; Raghavan, Praveen; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2015) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016)