Browsing by author "Collaert, Nadine"
Now showing items 21-40 of 692
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A near- & short-wave IR tunable InGaAs nanomembrane photoFET on flexible substrate for lightweight and wide-angle imaging applications
Li, Yida; Alian, AliReza; Huang, Li; Ang, Kah Wee; Lin, Dennis; Mocuta, Dan; Collaert, Nadine; Thean, Aaron V-Y (2018) -
A new complementary hetero-junction vertical tunnel-FET integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, A.; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2013) -
A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C
Lu, Zhichao; Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; De Keersgieter, An; Schwarzenbach, W.; Bonnin, O.; Bourdelle, K.K.; Nguyen, B.-Y.; Mazure, C.; Altimime, Laith; Jurczak, Gosia (2010) -
A physics-aware compact modeling framework for transistor aging in the entire bias space
Wu, Zhicheng; Franco, Jacopo; Roussel, Philippe; Tyaginov, Stanislav; Truijen, Brecht; Vandemaele, Michiel; Hellings, Geert; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Kaczer, Ben (2019) -
A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06) -
A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Yu, Hao; Schaekers, Marc; Schram, Tom; Collaert, Nadine; De Meyer, Kristin; Horiguchi, Naoto; Thean, Aaron; Barla, Kathy (2014) -
A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond
Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Horiguchi, Naoto; De Meyer, Kristin; Collaert, Nadine (2022-11-21) -
A successful selective epitaxial Si1-xGex deposition process for HBT-BiCMOS and high-mobility heterojunction pMOS applications
Loo, Roger; Caymax, Matty; Peytier, Ivan; Decoutere, Stefaan; Collaert, Nadine; Verheyen, Peter; Vandervorst, Wilfried; De Meyer, Kristin (2004) -
A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, AliReza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio (2015) -
A vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity, using a novel gate dielectric approach
Verheyen, P.; Collaert, Nadine; Caymax, Matty; Loo, Roger; De Meyer, Kristin; Van Rossum, Marc (1999) -
A wafer-scaled III-V vertical FET fabrication by means of plasma etching
Milenin, Alexey; Veloso, Anabela; Collaert, Nadine; Piumi, Daniele (2018) -
AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015) -
Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
Wu, Zhicheng; Franco, Jacopo; Claes, Dieter; Rzepa, Gerhard; Roussel, Philippe; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019) -
Accurate and reliable optical CD of MuGFET down to 10nm
Leray, Philippe; Lorusso, Gian; Cheng, Shaunee; Collaert, Nadine; Jurczak, Gosia; Shirke, S. (2007) -
Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects
Kilchytska, Valeriya; Lederer, Dimitri; Collaert, Nadine; Jean-Pierre, Raskin; Flandre, Denis (2005-10) -
Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
Xing, Guo; Hatchtel, Jordan; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Pantelides, Sokrates (2015-09) -
Advanced channel materials for the semiconductor industry
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Lin, Dennis; Mitard, Jerome; Sioncke, Sonja; Waldron, Niamh; Witters, Liesbeth; Zhou, Daisy; Thean, Aaron (2015) -
Advanced CMOS device technologies for 45nm node and below
Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007)