Browsing by author "Hellings, Geert"
Now showing items 21-40 of 222
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Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Malinowski, Pawel; John, Joachim; Duboz, Jean-Yves; Hellings, Geert; Lorenz, Anne; Rodriguez Madrid, Juan; Sturdevant, Charles; Cheng, Kai; Leys, Maarten; Derluyn, Joff; Das, Jo; Germain, Marianne; Minoglou, Kiki; De Moor, Piet; Frayssinet, Eric; Semond, Fabrice; Hochedez, Jean-Francois; Giordanengo, Boris; Mertens, Robert (2009-12) -
Benchmarking time-dependent variability of junctionless nanowire FETs
Kaczer, Ben; Rzepa, G.; Franco, Jacopo; Weckx, Pieter; Vaisman Chasin, Adrian; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Roussel, Philippe; Hellings, Geert; Veloso, Anabela; Matagne, Philippe; Grasser, T.; Linten, Dimitri (2017) -
Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Makarov, Alexander; Kaczer, Ben; Vaisman Chasin, Adrian; Vandemaele, Michiel; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
Bidirectional NPN ESD protection in silicon photonics technology
Boschke, Roman; Chen, Shih-Hung; Hellings, Geert; Scholz, Mirko; De Heyn, Vincent; Verheyen, Peter; Van Campenhout, Joris; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido (2016) -
BioFET technology: aggressively scaled pMOS FinFET as biosensor
Martens, Koen; Santermans, Sybren; Gupta, Mihir; Hellings, Geert; Wuytens, Robin; Du Bois, Bert; Dupuy, Emmanuel; Altamirano Sanchez, Efrain; Jans, Karolien; Vos, Rita; Stakenborg, Tim; Lagae, Liesbet; Heyns, Marc; Severi, Simone; Van Roy, Wim (2019) -
BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Hellings, Geert; Brus, Stephan; Cott, Daire; De Heyn, Vincent; Groeseneken, Guido; Horiguchi, Naoto; Ryckaert, Julien; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-12) -
Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond
Gupta, Anshul; Varela Pedreira, Olalla; Tao, Zheng; Mertens, Hans; Radisic, Dunja; Jourdan, Nicolas; Devriendt, Katia; Heylen, Nancy; Wang, Shouhua; Chehab, Bilal; Jang, Doyoung; Hellings, Geert; Sebaai, Farid; Lorant, Christophe; Teugels, Lieve; Peter, Antony; Chan, BT; Schleicher, Filip; Demonie, Ingrid; Marien, Philippe; Sepulveda Marquez, Alfonso; Richard, Olivier; Nagesh, Nishanth; Lesniewska, Alicja; Lazzarino, Frederic; Ryckaert, Julien; Morin, Pierre; Altamirano Sanchez, Efrain; Murdoch, Gayle; Boemmels, Juergen; Demuynck, Steven; Na, Myung Hee; Tokei, Zsolt; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2020) -
CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies
Chen, Shih-Hung; Linten, Dimitri; Hellings, Geert; Simicic, Marko; Kaczer, Ben; Chiarella, Thomas; Mertens, Hans; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto (2019) -
CFET SRAM DTCO, Interconnect Guideline, and Benchmark for CMOS Scaling
Liu, Hsiao-Hsuan; Salahuddin, Shairfe Muhammad; Chan, Boon Teik; Schuddinck, Pieter; Xiang, Yang; Hellings, Geert; Weckx, Pieter; Ryckaert, Julien; Catthoor, Francky (2023) -
CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark
Liu, Hsiao-Hsuan; Schuddinck, Pieter; Pei, Zhenlin; Verschueren, Lynn; Mertens, Hans; Salahuddin, Shairfe Muhammad; Hiblot, Gaspard; Xiang, Yang; Chan, Boon Teik; Subramanian, Sujith; Weckx, Pieter; Hellings, Geert; Garcia Bardon, Marie; Ryckaert, Julien; Pan, Chenyun; Catthoor, Francky (2023) -
Challenges and opportunities in advanced Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012) -
Challenges for ESD solutions in germanium-based technologies
Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Scholz, Mirko; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2016) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Challenges on surface conditioning in 3D device architectures: triple-gate FinFETs, gate-all-around lateral and vertical nanowire FETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Fleischmann, Claudia; Melkonyan, Davit; Huynh Bao, Trong; Eneman, Geert; Hellings, Geert; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
Bury, Erik; Kaczer, Ben; Mitard, Jerome; Collaert, Nadine; Khatami, N.S.; Aksamija, Zlatan; Vasileska, Dragica; Raleva, Katerina; Witters, Liesbeth; Hellings, Geert; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2015) -
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
Gaddemane, Gautam; Bhuwalka, Krishna K.; Matagne, Philippe; Rzepa, Gerhard; Van de Put, Maarten; Santermans, Sybren; Baumgartner, Oskar; Wu, Hao; Hellings, Geert (2022) -
Comparative analysis of the degradation mechanisms in logic and I/O FinFET devices induced by plasma damage
Hiblot, Gaspard; Liu, Yefan; Hellings, Geert; Van der Plas, Geert (2019) -
Comparison of system-level ESD design methodologies – towards the efficient and ESD robust design of systems
Scholz, Mirko; Chen, Shih-Hung; Vandersteen, Gerd; Linten, Dimitri; Hellings, Geert; Sawada, Masanori; Groeseneken, Guido (2013) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018)