Browsing by author "Wang, Gang"
Now showing items 21-40 of 53
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Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates
Wang, Gang; Rosseel, Erik; Loo, Roger; Favia, Paola; Bender, Hugo; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried (2010-12) -
Germanium for advanced CMOS anno 2009: a SWOT analysis
Caymax, Matty; Eneman, Geert; Bellenger, Florence; Merckling, Clement; Delabie, Annelies; Wang, Gang; Loo, Roger; Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Hellings, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc (2009) -
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Wang, Gang; Leys, Maarten; Nguyen, Duy; Loo, Roger; Brammertz, Guy; Richard, Olivier; Bender, Hugo; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011) -
Growth of high quality InP layers in STI trenches on Si (001) substrates
Wang, Gang; Nguyen, Duy; Leys, Maarten; Loo, Roger; Richard, Olivier; Brammertz, Guy; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2010) -
Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
Waldron, Niamh; Nguyen, Duy; Lin, Dennis; Brammertz, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderickx, Gillis; Sioncke, Sonja; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Meuris, Marc; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
High quality and low cost fabrication of virtual Ge substrates on STI patterned Si wafers
Loo, Roger; Wang, Gang; Mitard, Jerome; De Jaeger, Brice; Takeuchi, Shotaro; Eneman, Geert; Lin, Vic; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2009-09) -
High quality Ge epitaxial layers in narrow channels on Si (001) substrates
Wang, Gang; Rosseel, Erik; Loo, Roger; Favia, Paola; Bender, Hugo; Heyns, Marc; Vandervorst, Wilfried (2010) -
High quality Ge virtual substrates on Si wafers with standard STI patterning
Loo, Roger; Wang, Gang; Souriau, Laurent; Lin, Vic; Takeuchi, Shotaro; Brammertz, Guy; Caymax, Matty (2010) -
Hiqh quality Ge epitaxial layers in narrow channels on Si (001) substrates
Wang, Gang; Rosseel, Erik; Favia, Paola; Bender, Hugo; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Loo, Roger (2010) -
Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
Mitard, Jerome; Shea, C.; De Jaeger, Brice; Pristera, Andrea; Wang, Gang; Houssa, Michel; Eneman, Geert; Hellings, Geert; Wang, Wei-E; Lin, J.C.; Leys, Frederik; Loo, Roger; Winderickx, Gillis; Vrancken, Evi; Stesmans, Andre; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Meuris, Marc; Heyns, Marc (2009) -
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Investigation of the electrical properties of Ge/high-k gate stack: GeO2 VS Si-cap
Mitard, Jerome; Bellenger, Florence; Witters, Liesbeth; De Jaeger, Brice; Vincent, Benjamin; Nyns, Laura; Martens, Koen; Vrancken, Evi; Wang, Gang; Lin, Dennis; Loo, Roger; Caymax, Matty; De Meyer, Kristin; Heyns, Marc; Horiguchi, Naoto (2011) -
Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE
Cantoro, Mirco; Wang, Gang; Lin, Dennis; Klekachev, Alexander; Richard, Olivier; Bender, Hugo; Kim, Tae-Gon; Clemente, Francesca; Adelmann, Christoph; van der Veen, Marleen; Brammertz, Guy; Degroote, Stefan; Leys, Maarten; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2011) -
Nano beam diffraction: crystal structure and strain analysis at the nano-scale
Favia, Paola; Popovici, Mihaela Ioana; Eneman, Geert; Wang, Gang; Bargallo Gonzalez, Mireia; Simoen, Eddy; Menou, Nicolas; Bender, Hugo (2010) -
Nano-beam diffraction: crystal structure and strain analysis at the nanoscale
Favia, Paola; Popovici, Mihaela Ioana; Eneman, Geert; Wang, Gang; Bargallo Gonzalez, Mireia; Simoen, Eddy; Menou, Nicolas; Bender, Hugo (2010) -
On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions
Yang, Rui; Eneman, Geert; Wang, Gang; Claeys, Cor; Simoen, Eddy (2009) -
P+/N junction leakage in thin selectively grown Ge-in-STI substrates
Eneman, Geert; Yang, Rui; Wang, Gang; De Jaeger, Brice; Loo, Roger; Claeys, Cor; Caymax, Matty; Meuris, Marc; Heyns, Marc; Simoen, Eddy (2010) -
P+/N junction leakage in thin selectively grown germanium-in-STI substrates
Eneman, Geert; Yang, Rui; Wang, Gang; De Jaeger, Brice; Loo, Roger; Claeys, Cor; Meuris, Marc; Heyns, Marc; Simoen, Eddy (2009) -
Selective area growth of high quality InP on Si (001) substrates
Wang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; Waldron, Niamh; Brammertz, Guy; Dekoster, Johan; Wang, Wei-E; Seefeldt, Marc; Caymax, Matty; Heyns, Marc (2010-09) -
Selective area growth of InP and defect elimination on Si (001) substrates
Wang, Gang; Leys, Maarten; Loo, Roger; Richard, Olivier; Bender, Hugo; Brammertz, Guy; Waldron, Niamh; Wang, Wei-E; Dekoster, Johan; Caymax, Matty; Seefeldt, Marc; Heyns, Marc (2011)