Browsing by author "Waldron, Niamh"
Now showing items 21-40 of 138
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Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Challenges and opportunities of vertical FET devices using 3D circuit design layouts
Veloso, Anabela; Huynh Bao, Trong; Rosseel, Erik; Paraschiv, Vasile; Devriendt, Katia; Vecchio, Emma; Delvaux, Christie; Chan, BT; Ercken, Monique; Tao, Zheng; Li, Waikin; Altamirano Sanchez, Efrain; Versluijs, Janko; Brus, Stephan; Matagne, Philippe; Waldron, Niamh; Ryckaert, Julien; Mocuta, Dan; Collaert, Nadine (2016) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Challenges on surface conditioning in 3D device architectures: triple-gate FinFETs, gate-all-around lateral and vertical nanowire FETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Fleischmann, Claudia; Melkonyan, Davit; Huynh Bao, Trong; Eneman, Geert; Hellings, Geert; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si
Favia, Paola; Richard, Olivier; Geypen, Jef; Waldron, Niamh; Merckling, Clement; Guo, Weiming; Caymax, Matty; Bender, Hugo (2013) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise
He, Liang; Chen, H.; Guo, D.D.; Hu, L.N.; Qin, Y.; Simoen, Eddy; Claeys, Cor; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2017) -
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Syshchyk, Olga; Hsu, Brent; Yu, Hao; Motsnyi, Vasyl; Vais, Abhitosh; Kunert, Bernardette; Mols, Yves; Alcotte, Reynald; Puybaret, Renaud; Waldron, Niamh; Soussan, Philippe; Boulenc, Pierre; Karve, Gauri; Simoen, Eddy; Collaert, Nadine; Puers, Bob; Van Hoof, Chris (2020) -
Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Design of a 28 GHz Differential GaAs Power Amplifier with Capacitive Neutralization for 5G mm-Wave Applications
Yan, Dongyang; Ingels, Mark; Mangraviti, Giovanni; Liu, Yao; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine; Wambacq, Piet (2019-06) -
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Togo, Mitsuhiro; Cho, Moon Ju; Ragnarsson, Lars-Ake; Hellings, Geert; Mitard, Jerome; Franco, Jacopo; Eneman, Geert; Witters, Liesbeth; Waldron, Niamh; Lin, Dennis; Pantisano, Luigi; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Do we have to worry about extended defects in high-mobility materials?
Simoen, Eddy; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2018) -
Double-gate Si junction-less n-type transistor for high performance Cu-BEOL compatible applications using 3D sequential integration
Vandooren, Anne; Witters, Liesbeth; Vecchio, Emma; Kunnen, Eddy; Hellings, Geert; Peng, Lan; Inoue, Fumihiro; Li, Waikin; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Electrical activity of extended defects in III-V semiconductors
Simoen, Eddy; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2019) -
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
Claeys, Cor; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Bender, Hugo; Seidel, Felix; Carolan, Patrick; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2020) -
Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
Yu, Hao; Hsu, Brent; Vais, Abhitosh; Simoen, Eddy; Waldron, Niamh; Collaert, Nadine (2019-06)