Browsing by title

N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal

Nguyen, N.D.; Souriau, Laurent; Shimizu, Y.; Jiang, Sijia; Rosseel, Erik; Everaert, Jean-Luc; Moussa, Alain; Clarysse, Trudo; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2011)

N-type IBC silicon solar cells with Al screen-printed and boron emitters

Posthuma, Niels; Aleman, Monica; Gong, Chun; Robbelein, Jo; Singh, Sukhvinder; Janssens, Tom; Recaman Payo, Maria; Verlinden, Pierre; Baert, Kris; Poortmans, Jef (2011)

N-type P-doped polycrystalline diamond

Nesladek, Milos; Haenen, K.; D'Haen, Jan; Koizumi, S.; Handa, K. (2003)

n-Type P-NCD: electrochemical and in-situ Raman spectroelectrochemical study

Vlckova Zivcova, Z.; Frank, O.; Drijkoningen, Sien; Haenen, Ken; Mortet, Vincent; Kavan, L. (2016)

n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

Zivcova, Z. Vlckova; Frank, O.; Drijkoningen, Sien; Haenen, Ken; Mortet, Vincent; Kavan, L. (2016)

N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Tüzün, Ö.; Slaoui, A.; Gordon, Ivan; Focsa, A.; Ballutaud, D.; Beaucarne, Guy; Poortmans, Jef (2008)

n-type Silicon solar cells: inevitable, impossible or unnecessary?

Poortmans, Jef (2016)

N-type silicon wafer screening for IBC solar cells by different thermal treatments

Singh, Sukhvinder; Debucquoy, Maarten; Wostyn, Kurt; Cornagliotti, Emanuele; O'Sullivan, Barry; Posthuma, Niels; Poortmans, Jef (2013)

N-type thin-film polycrystalline-silicon solar cells based on seedlayer overdoping and LPCVD thickening

Qiu, Yu; Tüzün, Özge; Venkatachalam, Srisaran; Gordon, Ivan; Slaoui, Abdelilah; Van Kerschaver, Emmanuel; Poortmans, Jef (2009)

N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices

Petry, Jasmine; Boccardi, Guillaume; Xiong, K.; Mueller, Markus; Hooker, Jacob; Singanamalla, Raghunath; Collaert, Nadine; De Meyer, Kristin (2008)

N-V-related fluorescence of the monoenergetic high-energy electron-irradiated diamond nanoparticles

Remes, Z; Micova, J.; Krist, P.; Chvatil, D.; Effenberg, R.; Nesladek, Milos (2015)

N10 logic patterning

Xu, Kaidong; Tao, Zheng; Hody, Hubert; Mannaert, Geert; Kunnen, Eddy; Mao, Ming; Lazzarino, Frederic; Decoster, Stefan (2014)

N10 SADP bulk FinFET depth micro loading improvement with bias pulsing plasma

Tao, Zheng; Vos, Ingrid; Altamirano Sanchez, Efrain; Xu, Kaidong; Hellin, David; Camerotto, Elisabeth; Jumel, Helene; Titus, Monica (2014)

N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation

Meunier-Beillard, Philippe; Caymax, Matty; Van Hoeymissen, Jan (2003)

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, Philippe; Caymax, Matty; Van Nieuwenhuysen, Kris; Doumen, Geert; Brijs, Bert; Hopstaken, M.; Geenen, Luc; Vandervorst, Wilfried (2003)

N5 BEOL process options patterning flows comparing 193immersion to hybrid EUV or full EUV

Lariviere, Stephane; Briggs, Basoene; Wilson, Chris; Mallik, Arindam; Decoster, Stefan; Wan, Danny; Bekaert, Joost; Blanco, Victor; Mao, Ming; Paolillo, Sara; Kutrzeba Kotowska, Bogumila; Versluijs, Janko; Boemmels, Juergen; Trivkovic, Darko; Tokei, Zsolt; McIntyre, Greg; Mocuta, Dan (2017)

N5 technology node dual-damascene interconnects enabled using multi patterning

Briggs, Basoene; Wilson, Chris; Devriendt, Katia; van der Veen, Marleen; Decoster, Stefan; Paolillo, Sara; Versluijs, Janko; Kesters, Els; Sebaai, Farid; Jourdan, Nicolas; El-Mekki, Zaid; Heylen, Nancy; Verdonck, Patrick; Wan, Danny; Varela Pedreira, Olalla; Croes, Kristof; Dutta, Shibesh; Ryckaert, Julien; Mallik, Arindam; Lariviere, Stephane; Boemmels, Juergen; Tokei, Zsolt (2017)