Browsing by author "Brijs, Bert"
Now showing items 41-60 of 194
-
Carrier illumination as a tool to probe implant dose and electrical activation
Vandervorst, Wilfried; Clarysse, Trudo; Brijs, Bert; Loo, Roger; Peytier, Ivan; Pawlak, Bartek; Budiarto, E.; Borden, P. (2003) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6 +N2 +H2
Li, Hua; Heyvaert, Ilse; Sing, Jin; Lanckmans, Filip; Brijs, Bert; Bender, Hugo; Maex, Karen; Froyen, L. (1999) -
Characterization of (ultra)thin dielectrica
Vandervorst, Wilfried; De Witte, Hilde; Conard, Thierry; Janssens, Tom; Schaekers, Marc; Brijs, Bert; Houssa, Michel (2000) -
Characterization of high and low dielectrica using low Energy Time of Flight Elastic Recoil Detection
Brijs, Bert; Sajavaara, T.; Giangrandi, Simone; Arstila, K. (2005) -
Characterization of high-k films grown by atomic layer deposition
Vandervorst, Wilfried; Conard, Thierry; Petry, Jasmine; Brijs, Bert; Bender, Hugo; Richard, Olivier; Caymax, Matty; De Gendt, Stefan; Green, Martin; Cartier, Eduard; Copel, M. (2002) -
Characterization of low energy (2-5keV) implantation into Si
Collart, E.J.; Kirkwood, D.; Vandenberg, J.A.; Werner, M.; Vandervorst, Wilfried; Brijs, Bert; Bailey, P.; Noakes, T.C.Q. (2002) -
Characterization of the growth of atomic layer deposited WNxCy films on various substrates
Martin Hoyas, Ana; Travaly, Youssef; Schuhmacher, Jorg; Sajavaara, Timo; Whelan, Caroline; Eyckens, Brenda; Richard, Olivier; Giangrandi,; Brijs, Bert; Jonas, A.M.; Vantomme, Andre; Vandervorst, Wilfried; Celis, Jean-Pierre; Maex, Karen (2005) -
Characterization of ultra thin layers by Rutherford backscattering spectrometry
Brijs, Bert; Deleu, Jeroen; Conard, Thierry; Li, H.; Loo, Roger; Caymax, Matty; Nakajima, K.; Kimura, K.; Vandervorst, Wilfried (1999) -
Characterization of ultra thin oxynitrides, a general approach
Brijs, Bert; Deleu, Jeroen; Conard, Thierry; De Witte, Hilde; Vandervorst, Wilfried; Nakajima, K.; Kimura, K.; Genchev, I.; Bergmaier, A.; Goergens, I.; Neumaier, P.; Dollinger, G.; Dobeli, M. (1999) -
Characterization of ultra thin oxynitrides: a general approach
Brijs, Bert; Deleu, Jeroen; Conard, Thierry; De Witte, Hilde; Vandervorst, Wilfried; Nakajima, K.; Kimura, K.; Genchev, I.; Bermaier, A.; Goergens, L.; Neumaier, P.; Dollinger, G.; Döbeli, M. (2000) -
Chemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth
Pawlak, Bartek; Lindsay, Richard; Kittl, Jorge; Vandervorst, Wilfried; Clarysse, Trudo; Hoflijk, Ilse; Dieu, B.; Geenen, Luc; Brijs, Bert (2003) -
Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
Pawlak, Bartek; Lindsay, Richard; Surdeanu, Radu; Dieu, Bjorn; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Duffy, Ray; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried (2004) -
CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Dachs, Charles; Surdeanu, Radu; Pawlak, Bartek; Doornbos, Gerben; Duffy, R.; Heringa, Anco; Ponomarev, Youri; Venezia, Vincent; Van Dal, Mark; Stolk, P.; Lindsay, Richard; Henson, Kirklen; Dieu, B.; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried; Pagès, Xavier (2003) -
Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe
Caymax, Matty; Loo, Roger; Brijs, Bert; Vandervorst, Wilfried; Howard, Dave; Kimura, K.; Nakajima, K. (1998) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Compositional depth profiling of TaCN thin films
Adelmann, Christoph; Conard, Thierry; Franquet, Alexis; Brijs, Bert; Munnik, Frans; Burgess, Simon; Witters, Thomas; Meersschaut, Johan; Kittl, Jorge; Vandervorst, Wilfried; Van Elshocht, Sven (2012) -
Considerations about multiple and plural scattering in heavy-ion low-energy ERDA
Giangrandi, Simone; Arstila, Kai; Brijs, Bert; Sajavaara, T.; Vantomme, Andre; Vandervorst, Wilfried (2009) -
CoSi2 formation in the presence of carbon
Detavernier, C.; Van Meirhaeghe, R.L.; Bender, Hugo; Richard, Olivier; Brijs, Bert; Maex, Karen (2002) -
Critical metrology for ultrathin high k dielectrics
Vandervorst, Wilfried; Brijs, Bert; Bender, Hugo; Conard, Thierry; Petry, Jasmine; Richard, Olivier; Blasco, X.; Nafría, M. (2003) -
Crystallization resistance of barium titanate zirconate ultrathin films from aqueousCSD: a study of cause and effect
Hardy, An; Van Elshocht, Sven; Knaepen, Werner; D'Haen, Jan; Conard, Thierry; Brijs, Bert; Vandervorst, Wilfried; Pourtois, Geoffrey; Kittl, Jorge; Detavernier, Christophe; Heyns, Marc; Van Bael, Marlies; Van den Rul, Heidi; Mullens, Jules (2009)