Recently added

Proceedings of the Workshop on Decentralizing the Semantic Web

Verborgh, Ruben; Kuhn, T.; Sambra, A. (2017-10)

Ruthenium Atomic Layer Deposition (ALD)-enabled selectivity of Cobalt Electroless Layer Deposition (ELD) on dielectrics

Zyulkov, Ivan; Krishtab, Mikhail; De Gendt, Stefan; Armini, Silvia (2016)

Ultra low-k etching by neutral beams produced from CF4/Ar and SF6/Ar ICP plasmas

Zotovich, Alexey; El Otell, Ziad; Sutton, Yvonne; Braithwaite, N. St. J.; de Marneffe, Jean-Francois; Baklanov, Mikhail (2016)

Non-volatile spin-wave majority gate at the nanoscale

Zografos, Odysseas; Dutta, Sourav; Manfrini, Mauricio; Soree, Bart; Naeemi, Azad; Raghavan, Praveen; Lauwereins, Rudy; Radu, Iuliana (2016)

Ultra-compact silicon nitride grating coupler for microscopy system

Zhu, Yunpeng; Jiao, Y.; Wang, J.; Xie, Weiqiang; Bin, Tian; Van Thourhout, Dries (2016)

Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform

Zhou, Daisy; Waldron, Niamh; Boccardi, Guillaume; Sebaai, Farid; Merckling, Clement; Eneman, Geert; Sioncke, Sonja; Nyns, Laura; Opdebeeck, Ann; Maes, Jan; Xie, Qi; Givens, M; Tang, F; Jiang, X; Guo, Weiming; Kunert, Bernardette; Teugels, Lieve; Devriendt, Katia; Sibaja-Hernandez, Arturo; Franco, Jacopo; van Dorp, Dennis; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016)

Study on the dispersion control of AlGaN/GaN buffers grown by MOCVD on 200 mm Si (111)

Zhao, Ming; Stoffels, Steve; Van Hove, Marleen; Kandaswamy, Prem Kumar; Liang, Hu; Decoutere, Stefaan (2016)

MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)

Zhao, Ming; Priesol, Juraj; Satka, Alexander; Janicki, Lukasz; Baranowski, Michal; Misiewicz, Jan; Kudrawiec, Robert; Saripalli, Yoga (2016)

Multiplex coherent anti-stokes raman spectroscopy on a CMOS compatible platform

Zhao, Haolan; Clemmen, Stephane; Baets, Roel (2016)

Integration aspects of post-porosity low-k protection using PMMA sacrificial filler

Zhang, Liping; de Marneffe, Jean-Francois; Wen, Liang Gong; Wilson, Chris; Tokei, Zsolt; Boemmels, Juergen; De Gendt, Stefan; Baklanov, Mikhaïl (2016)

Toward successful integration of gap-filling ultralow-k dielectrics

Zhang, Liping; de Marneffe, Jean-Francois; Lesniewska, Alicja; Verdonck, Patrick; Heylen, Nancy; Murdoch, Gayle; Croes, Kristof; Tokei, Zsolt; Boemmels, Juergen; Lefferts, S.; De Gendt, Stefan; Baklanov, Mikhaïl (2016)

Detection of multiple single nucleotide polymorhisms on a single microfluidic chip

Zhang, Lei; Cai, Qing; Wiederkehr, Rodrigo Sergio; Fauvart, Maarten; Fiorini, Paolo; Majeed, Bivragh; Stakenborg, Tim (2016)

Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe

Zhang, Jian; Yu, Hao; Schaekers, Marc; Horiguchi, Naoto; Wang, Linlin; Jiang, Yulong (2016)

Nucleation of Al2O3 atomic layer deposition on MoS2, a two-dimensional semiconductor

Zhang, Haodong; Chiappe, Daniele; Meersschaut, Johan; Conard, Thierry; Franquet, Alexis; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2016)

Pitch walking assessment after self-aligned double patterning for the 10nm logic technology node

Zarate Rincon, Fabian; Vega Gonzalez, Victor; Ciofi, Ivan; Wilson, Chris; van der Veen, Marleen; Roussel, Philippe; Boemmels, Juergen; Tokei, Zsolt; Torres, R.; Murphy, R.S. (2016)

Mechanically conscious design of airgaps in nano-interconnects

Zahedmanesh, Houman; Gonzalez, Mario; Ciofi, Ivan; Croes, Kristof; Boemmels, Juergen; Tokei, Zsolt (2016)

Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?

Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016)

Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Yu, Hao; Schaekers, Marc; Hikavyy, Andriy; Rosseel, Erik; Peter, Antony; Hollar, K.; Khaja, Fareen; Aderhold, W.; Date, Lucien; Mayur, A.J.; Lee, J.G.; Shin, Keo Myoung; Douhard, Bastien; Chew, Soon Aik; Demuynck, Steven; Kubicek, Stefan; Kim, Daeyong; Mocuta, Anda; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)

Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

Yu, Hao; Schaekers, Marc; Demuynck, Steven; Rosseel, Erik; Everaert, Jean-Luc; Chew, Soon Aik; Peter, Antony; Kubicek, Stefan; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

Yu, Hao; Schaekers, Marc; Demuynck, Steven; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)

Conference contributions: Recent submissions

Proceedings of the Workshop on Decentralizing the Semantic Web ﻿

Ruthenium Atomic Layer Deposition (ALD)-enabled selectivity of Cobalt Electroless Layer Deposition (ELD) on dielectrics ﻿

Ultra low-k etching by neutral beams produced from CF4/Ar and SF6/Ar ICP plasmas ﻿

Non-volatile spin-wave majority gate at the nanoscale ﻿

Ultra-compact silicon nitride grating coupler for microscopy system ﻿

Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform ﻿

Study on the dispersion control of AlGaN/GaN buffers grown by MOCVD on 200 mm Si (111) ﻿

MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111) ﻿

Multiplex coherent anti-stokes raman spectroscopy on a CMOS compatible platform ﻿

Integration aspects of post-porosity low-k protection using PMMA sacrificial filler ﻿

Toward successful integration of gap-filling ultralow-k dielectrics ﻿

Detection of multiple single nucleotide polymorhisms on a single microfluidic chip ﻿

Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe ﻿

Nucleation of Al2O3 atomic layer deposition on MoS2, a two-dimensional semiconductor ﻿

Pitch walking assessment after self-aligned double patterning for the 10nm logic technology node ﻿

Mechanically conscious design of airgaps in nano-interconnects ﻿

Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem? ﻿

Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation ﻿

Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices ﻿

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond ﻿