Recently added

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill – process and reliability

Wang, Teng; De Messemaeker, Joke; Cherman, Vladimir; Kay, Alvin Chow Chee; Cadacio Jr., Francisco; Matterne, Mireille; Simons, Veerle; Van De Peer, Myriam; Lesniewska, Alicja; Varela Pedreira, Olalla; Gerets, Carine; Rebibis, Kenneth June; Beyne, Eric (2015)

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015)

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015)

Conference contributions: Recent submissions

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill – process and reliability

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Integration of III-V on Si for high-mobility CMOS

An 8-phase 10 GHz voltage controlled ring oscillator for 40 Gbit/s BiPON clock-and-data recovery

Voltage controlled oscillators for 40 Gbit/s cascaded bit-interleaving PON

CBI-PON: a low power solution offering flexible bandwidth allocation for 40 Gbit/s next generation metro/access networks

Low temperature aqueous precipitation synthesis of LiMnPO4 nano particles for Li ion battery cathodes

Light stability of ITO-free semi-transparent and opaque organic photovoltaic devices

Role of interface layers in organic device stability

Fine pitch 3D-TSV based high frequency components for RF MEMS applications

Identification of superior ethanol tolerant industrial yeasts using droplet microfluidics

15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors

Real-Time RF Self-Interference Cancellation for In-Band Full Duplex

An energy-scalable in-band full duplex architecture

Tunnel-FET versus MOSFET on chip

Two-photon absorption in gold mediated by higher order plasmonic antenna modes

Optical nanoantennas: controlling light at the nanoscale

Electrodeposition of thick MnO2 films on restrictive substrates

Forced wetting of superhydrophobic nanostructures by atmosphere control

Conference contributions: Recent submissions

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill – process and reliability ﻿

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain ﻿

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow ﻿

Integration of III-V on Si for high-mobility CMOS ﻿

An 8-phase 10 GHz voltage controlled ring oscillator for 40 Gbit/s BiPON clock-and-data recovery ﻿

Voltage controlled oscillators for 40 Gbit/s cascaded bit-interleaving PON ﻿

CBI-PON: a low power solution offering flexible bandwidth allocation for 40 Gbit/s next generation metro/access networks ﻿

Low temperature aqueous precipitation synthesis of LiMnPO4 nano particles for Li ion battery cathodes ﻿

Light stability of ITO-free semi-transparent and opaque organic photovoltaic devices ﻿

Role of interface layers in organic device stability ﻿

Fine pitch 3D-TSV based high frequency components for RF MEMS applications ﻿

Identification of superior ethanol tolerant industrial yeasts using droplet microfluidics ﻿

15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors ﻿

Real-Time RF Self-Interference Cancellation for In-Band Full Duplex ﻿

An energy-scalable in-band full duplex architecture ﻿

Tunnel-FET versus MOSFET on chip ﻿

Two-photon absorption in gold mediated by higher order plasmonic antenna modes ﻿

Optical nanoantennas: controlling light at the nanoscale ﻿

Electrodeposition of thick MnO2 films on restrictive substrates ﻿

Forced wetting of superhydrophobic nanostructures by atmosphere control ﻿

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill – process and reliability

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Integration of III-V on Si for high-mobility CMOS

An 8-phase 10 GHz voltage controlled ring oscillator for 40 Gbit/s BiPON clock-and-data recovery

Voltage controlled oscillators for 40 Gbit/s cascaded bit-interleaving PON

CBI-PON: a low power solution offering flexible bandwidth allocation for 40 Gbit/s next generation metro/access networks

Low temperature aqueous precipitation synthesis of LiMnPO4 nano particles for Li ion battery cathodes

Light stability of ITO-free semi-transparent and opaque organic photovoltaic devices

Role of interface layers in organic device stability

Fine pitch 3D-TSV based high frequency components for RF MEMS applications

Identification of superior ethanol tolerant industrial yeasts using droplet microfluidics

15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors

Real-Time RF Self-Interference Cancellation for In-Band Full Duplex

An energy-scalable in-band full duplex architecture

Tunnel-FET versus MOSFET on chip

Two-photon absorption in gold mediated by higher order plasmonic antenna modes

Optical nanoantennas: controlling light at the nanoscale

Electrodeposition of thick MnO2 films on restrictive substrates

Forced wetting of superhydrophobic nanostructures by atmosphere control