RF modelling and characterization of TSVs and inductive links of hybrid bonded devices

Abstract

Wafer-to-wafer hybrid bonding allows for the integration of different semiconductor materials and the creation of complex 3D structures, resulting in higher device density and reduced interconnect parasitic. This paper focuses on the RF performance of the interconnect in hybrid bonded devices. Specifically, we study noise coupling between 5/5 mu m TSVs, as well as inductive links between different metal layers and their applications for both wireless communication and non-invasive wafer testing. The study combines experimental measurements with calibrated HFSS models up to 67 GHz. ESD tests have also been conducted on hybrid-bonded inductor loops for reliability evaluations.