Browsing by author "Chen, Shih-Hung"

A 0.7-1.15GHz complementary common-gate LNA in 0.18μm SOl CMOS with +15dBm IIP3 and >1kV HBM ESD protection

van Liempd, Barend; Ariumi, Saneaki; Martens, Ewout; Chen, Shih-Hung; Wambacq, Piet; Craninckx, Jan (2015)

A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication

Liu, Yao; Tang, Xinyan; Mangraviti, Giovanni; Khalaf, Khaled; Zhang, Yang; Wu, Wei-Min; Chen, Shih-Hung; Debaillie, Bjorn; Wambacq, Piet (2020)

Active-lite interposer for 2.5 & 3D integration

Hellings, Geert; Scholz, Mirko; Detalle, Mikael; Velenis, Dimitrios; de Potter de ten Broeck, Muriel; Roda Neve, Cesar; Li, Yunlong; Van Huylenbroeck, Stefaan; Chen, Shih-Hung; Marinissen, Erik Jan; La Manna, Antonio; Van der Plas, Geert; Linten, Dimitri; Beyne, Eric; Thean, Aaron (2015)

Advanced CMOS Technology Challenges for Robust ESD Design

Chen, Shih-Hung (2022)

An insight into the effects induced by heavy-ion strikes in

Griffoni, Alessio; Thijs, Steven; Chen, Shih-Hung; Tazzoli, Augusto; Cordoni, Martina; Colombo, Paolo; Paccagnella, Alessandro; Linten, Dimitri; Groeseneken, Guido (2011)

Bidirectional NPN ESD protection in silicon photonics technology

Boschke, Roman; Chen, Shih-Hung; Hellings, Geert; Scholz, Mirko; De Heyn, Vincent; Verheyen, Peter; Van Campenhout, Joris; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido (2016)

Calibration and modeling of LICCDM setups

Simicic, Marko; Wu, Wei-Min; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Chen, Shih-Hung (2021)

CDM ESD testing of a 3D TSV stacked IC chip

Nagata, Nagata; Takaya, Satoshi; Ikeda, Hiroaki; Linten, Dimitri; Scholz, Mirko; Chen, Shih-Hung; Hasegawa, Keiichi; Shintani, Taizo; Sawada, Masanori (2014-10)

CDM protection of a 3D TSV memory IC with a 100 GB/s Wide I/O data bus

Nagata, Makoto; Takaya, Satoshi; Ikeda, Hiroaki; Linten, Dimitri; Scholz, Mirko; Chen, Shih-Hung; Hasegawa, Keiichi; Shintani, Taizo; Sawada, Masanori (2014-09)

CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies

Chen, Shih-Hung; Linten, Dimitri; Hellings, Geert; Simicic, Marko; Kaczer, Ben; Chiarella, Thomas; Mertens, Hans; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto (2019)

Challenges and solutions for ESD protection in advanced logic and RF CMOS technologies

Linten, Dimitri; Thijs, Steven; Raczkowski, Kuba; Griffoni, Alessio; Chen, Shih-Hung; Song, Ming-Hsiang; Nauwelaers, Bart; Groeseneken, Guido (2011)

Challenges for ESD solutions in germanium-based technologies

Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Scholz, Mirko; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2016)

Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup

Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018)

Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

Griffoni, Alessio; Chen, Shih-Hung; Thijs, Steven; Linten, Dimitri; Scholz, Mirko; Groeseneken, Guido (2010)