Browsing Articles by imec author "00f2ea23cbe3cca685a69f66909e10a7bd38f78e"
Now showing items 1-20 of 117
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A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Gaur, Abhinav; Agarwal, Tarun; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2020) -
A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion
Heyne, Markus; Marinov, Daniil; Braithwaite, Nicholas; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Radu, Iuliana; Neyts, Erik C.; De Gendt, Stefan (2019) -
All electrical propagating spin wave spectroscopy with broadband wavevector capability
Ciubotaru, Florin; Devolder, Thibaut; Manfrini, Mauricio; Adelmann, Christoph; Radu, Iuliana (2016) -
All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Raymenants, Eline; Wan, Danny; Couet, Sebastien; Souriau, Laurent; Thiam, Arame; Tsvetanova, Diana; Canvel, Yann; Garello, Kevin; Kar, Gouri Sankar; Heyns, Marc; Asselberghs, Inge; Nikonov, Dmitri E.; Young, Ian A.; Pizzini, Stefania; Radu, Iuliana; Nguyen, Van Dai (2021) -
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Gaur, Abhinav; Chiappe, Daniele; Lin, Dennis; Cott, Daire; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana (2019) -
Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Back-hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
Devolder, Thibaut; Bultynck, Olivier; Bouquin, Paul; Nguyen, Van Dai; Rao, Siddharth; Radu, Iuliana; Kar, Gouri Sankar; Couet, Sebastien (2020) -
Band alignment and effective work function of atomiclayer deposited VO2 and V2O5 films on SiO2 and Al2O3
Cerbu, Florin; Chou, H.S.; Radu, Iuliana; Martens, Koen; Peter, Antony; Afanasev, Valeri; Stesmans, Andre (2015) -
Benchmarking of MoS2 FETs with multigate Si-FET options for 5 nm and beyond
Agarwal Kumar, Tarun; Yakimets, Dmitry; Raghavan, Praveen; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2015) -
Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications
Agarwal Kumar, Tarun; Nourbakhsh, Amirhasan; Raghavan, Praveen; Radu, Iuliana; Verhelst, Marian; De Gendt, Stefan; Heyns, Marc; Thean, Aaron (2014) -
Chain of magnetic tunnel junctions as a spintronic memristor
Raymenants, Eline; Vaysset, Adrien; Wan, Danny; Manfrini, Mauricio; Zografos, Odysseas; Bultynck, Olivier; Doevenspeck, Jonas; Heyns, Marc; Radu, Iuliana; Devolder, Thibaut (2018) -
Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits
Schram, Tom; Sutar, Surajit; Radu, Iuliana; Asselberghs, Inge (2022-12-01) -
Characterization of thin films of the solid electrolyte LixMg1-2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)
Put, Brecht; Vereecken, Philippe; Mees, Maarten; Rosciano, Fabio; Radu, Iuliana; Stesmans, Andre (2015) -
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low temperature
Groven, Benjamin; Claes, Dieter; Nalin Mehta, Ankit; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2019) -
CMOS-compatible dielectric constant engineering by embedding metallic particles in aluminum oxide
Put, Brecht; Adelmann, Christoph; Swerts, Johan; Rooyackers, Rita; Tielens, Hilde; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana (2013) -
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
Agarwal Kumar, Tarun; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Fiori, Gianluca; Iannaccone, Giuseppe; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2016) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition
Rampelberg, Geert; Deduytsche, Davy; De Schutter, Bob; Peter, Antony; Toeller, Michael; Schaekers, Marc; Martens, Koen; Radu, Iuliana; Detavernier, Christophe (2014) -
Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
Lin, Dennis; Asselberghs, Inge; Vais, Abhitosh; Arutchelvan, G.; Delabie, Annelies; Heyns, Marc; Mocuta, Anda; Radu, Iuliana; Thean, Aaron (2015) -
Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Gaur, Abhinav; Balaji, Yashwanth; Lin, Dennis; Adelmann, Christoph; Van Houdt, Jan; Heyns, Marc; Mocuta, Dan; Radu, Iuliana (2017)