Browsing Articles by imec author "161047720509463b8eb08eda56887779c992df2a"
Now showing items 21-40 of 171
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Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Goux, Ludovic; Polspoel, Wouter; Lisoni, Judit; Chen, Yangyin; Pantisano, Luigi; Wang, Xin Peng; Vandervorst, Wilfried; Jurczak, Gosia; Wouters, Dirk (2010) -
BJT mode endurance on a 1T-RAM bulk FinFET device
Aoulaiche, Marc; Collaert, Nadine; Degraeve, Robin; Lu, Zhichao; De Wachter, Bart; Jurczak, Gosia; Altimime, Laith (2010) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
Rudenko, Tamara; Kilchytska, Valeria; Collaert, Nadine; Jurczak, Gosia; Nazarov, A.; Flandre, Denis (2008) -
Causes and consequences of the stochastic aspect of filamentary RRAM
Degraeve, Robin; Fantini, Andrea; Raghavan, Nagarajan; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Belmonte, Attilio; Linten, Dimitri; Jurczak, Gosia (2015) -
Cell variability impact on the one-selector one-resistor cross-point array performance
Zhang, Leqi; Cosemans, Stefan; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Govoreanu, Bogdan (2015) -
Cellulose nanofiber paper as an ultra flexible nonvolatile memory
Nagashima, Kazuki; Koga, Hiroito; Celano, Umberto; Zhuge, Fuwei; Kanai, Masakai; Rahong, Sakon; Meng, Gang; He, Yong; De Boeck, Jo; Jurczak, Gosia; Vandervorst, Wilfried; Kitaoka, Takuya; Nogi, Masaya; Yanagida, Takeshi (2014) -
Characterization and optimization of sub-32nm FinFET devices for ESD applications
Thijs, Steven; Tremouilles, David; Russ, Christian; Griffoni, Alessio; Collaert, Nadine; Rooyackers, Rita; Linten, Dimitri; Scholz, Mirko; Duvvury, Charvaka; Gossner, Harald; Jurczak, Gosia; Groeseneken, Guido (2008) -
CMOS integration results for the 90nm technology node
Jurczak, Gosia; Augendre, Emmanuel; Van Bavel, Mieke; Dachs, Charles (2003) -
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
Goux, Ludovic; Lisoni, Judit; Jurczak, Gosia; Wouters, Dirk; Courtade, Lorene; Muller, Christophe (2010) -
Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells
Devulder, Wouter; Opsomer, Karl; Meersschaut, Johan; Deduytsche, Davy; Jurczak, Gosia; Goux, Ludovic; Detavernier, Christophe (2015) -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Martens, Koen; Rooyackers, Rita; Firrincieli, Andrea; Vincent, Benjamin; Loo, Roger; De Jaeger, Brice; Meuris, Marc; Favia, Paola; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried; Simoen, Eddy; Jurczak, Gosia; Wouters, Dirk; Kittl, Jorge (2011) -
Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
Masahara, Meishoku; Surdeanu, Radu; Witters, Liesbeth; Doornbos, Gerben; Nguyen Hoang, Viet; Van den Bosch, Geert; Vrancken, Christa; Devriendt, Katia; Neuilly, Francois; Kunnen, Eddy; Jurczak, Gosia; Biesemans, Serge (2007-03) -
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations
Clima, Sergiu; Kaczer, Ben; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Swerts, Johan; Verhulst, Anne; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2013) -
Dielectric pockets - a new concept of the junctions for deca- nanometric CMOS devices
Jurczak, Gosia; Skotnicki, T.; Gwoziecki, R.; Paoli, M.; Tormen, B.; Ribot, P.; Dutartre, D.; Monfray, S.; Galvier, J. (2001) -
Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain
Shickova, Adelina; Kaczer, Ben; Simoen, Eddy; Verheyen, Peter; Eneman, Geert; Jurczak, Gosia; Absil, Philippe; Maes, Herman; Groeseneken, Guido (2007) -
Direct evidence of the overshoot suppression in Ta2O5-based resistive switching memory with an integrated access resistor
Fan, Jimmy; Zhang, Leqi; Crotti, Davide; Witters, Thomas; Jurczak, Gosia; Govoreanu, Bogdan (2015) -
Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
Rudenko, Tamara; Collaert, Nadine; De Gendt, Stefan; Kilchytska, V.; Jurczak, Gosia; Flandre, Denis (2005)