Browsing Articles by imec author "71b89e915792bbfe9fa9298dbedd09c1c84a50cf"
Now showing items 1-20 of 52
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18% efficiency IBC cell with rear-surface processed on quartz
Dross, Frederic; O'Sullivan, Barry; Debucquoy, Maarten; Bearda, Twan; Govaerts, Jonathan; Labie, Riet; Loozen, Xavier; Granata, Stefano; El Daif, Ounsi; Trompoukis, Christos; Van Nieuwenhuysen, Kris; Meuris, Marc; Gordon, Ivan; Posthuma, Niels; Baert, Kris; Poortmans, Jef; Boulord, Caroline; Beaucarne, Guy (2013) -
80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2021) -
A field-effect transistor-based room-temperature quantum current source
Cheung, Kin P.; O'Sullivan, Barry (2023) -
A monolithic all-silicon multi-junction solar device for direct water splitting
Nordmann, S.; Berghoff, B.; Hessel, A.; Wilck, N.; O'Sullivan, Barry; Debucquoy, Maarten; John, Joachim; Starschich, S.; Knoch, J. (2016) -
Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
San Andres Serrano, Enrique; Pantisano, Luigi; Ramos, Javier; Roussel, Philippe; O'Sullivan, Barry; Toledano Luque, Maria; De Gendt, Stefan; Groeseneken, Guido (2007) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Advanced Current-Voltage Model of Electrical Contacts to GaAs- and Ge-Based Active Silicon Photonic Devices
Hsieh, Ping-Yi; O'Sullivan, Barry; Tsiara, Artemisia; Truijen, Brecht; Lagrain, Pieter; Wouters, Lennaert; Yudistira, Didit; Kunert, Bernardette; Van Campenhout, Joris; De Wolf, Ingrid (2023) -
Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Groeseneken, Guido (2008) -
Application of seed and plate metallization to 15.6cm × 15.6cm IBC cells
Singh, Sukhvinder; O'Sullivan, Barry; Kyuzo, Manabu; Jambaldinni, Shruti; Tous, Loic; Russell, Richard; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2015) -
Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?
Simoen, Eddy; O'Sullivan, Barry; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Schram, Tom; Horiguchi, Naoto; Claeys, Cor (2019) -
Charge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode
O'Sullivan, Barry; Pourtois, Geoffrey; Kaushik, Vidya; Schram, Tom; Kittl, Jorge; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2007-07) -
CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits
Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto (2018) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
Nguyen Hoang, Thoan; Jivanescu, Mihaela; O'Sullivan, Barry; Pantisano, Luigi; Gordon, Ivan; Afanas'ev, Valery; Stesmans, Andre (2012) -
Crystalline thin-foil silicon solar cells: where crystalline quality meets thin-film processing
Dross, Frederic; Baert, Kris; Bearda, Twan; Deckers, Jan; Depauw, Valerie; El Daif, Ounsi; Gordon, Ivan; Gougam, Adel; Govaerts, Jonathan; Granata, Stefano; Labie, Riet; Loozen, Xavier; Martini, Roberto; Masolin, Alex; O'Sullivan, Barry; Qiu, Yu; Vaes, Jan; Van Gestel, Dries; Van Hoeymissen, Jan; Vanleenhove, Anja; Van Nieuwenhuysen, Kris; Venkatachalam, Srisaran; Meuris, Marc; Poortmans, Jef (2012) -
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
Izmailov, R. A.; O'Sullivan, Barry; Popovici, Mihaela Ioana; Afanas'ev, V. V. (2022) -
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
Simoen, Eddy; Ferro, Valentina; O'Sullivan, Barry (2014) -
Defect profiling in FEFET Si:HfO2 layers
O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020) -
Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation
O'Sullivan, Barry; Kaushik, Vidya; Everaert, Jean-Luc; Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Rohr, Erika; De Gendt, Stefan; Heyns, Marc (2007) -
Electron trapping in ferroelectric HfO2
Izmailov, Roman A.; Strand, Jack W.; Larcher, Luca; Shluger, Alexander L.; Afanas'ev, Valeri V.; O'Sullivan, Barry (2021)