Browsing Articles by imec author "b6ac06cee0e8f5a61784b2657a265eea04e0d9d9"
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200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2017) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy
Lechaux, Yoann; Minj, Albert; Mechin, Laurence; Liang, Hu; Geens, Karen; Zhao, Ming; Simoen, Eddy; Guillet, Bruno (2020) -
CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Van Hove, Marleen; Boulay, Sanae; Bahl, Sandeep; Stoffels, Steve; Kang, Xuanwu; Wellekens, Dirk; Geens, Karen; Delabie, Annelies; Decoutere, Stefaan (2012) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Li, Xiangdong; Geens, Karen; Zhao, Ming; You, Shuzhen; Wischmeyer, Frank; Odnoblyudov, Vladimir; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
Fabrication and performance of Au-free AlGaN/GaN-on-Si power devices
Van Hove, Marleen; Kang, Xuanwu; Stoffels, Steve; Wellekens, Dirk; Ronchi, Nicolo; Venegas, Rafael; Geens, Karen; Decoutere, Stefaan (2013) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates
Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan (2018) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Heuken, Michael; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Integration of GaN analog building blocks on p-GaN wafers for GaN ICs
Li, Xiangdong; Geens, Karen; Amirifar, Nooshin; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Investigation of light-induced deep-level defect activation at the AlN/Si interface
Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Derluyn, Joff; Simoen, Eddy; Srivastava, Puneet; Geens, Karen; Degroote, Stefan; Germain, Marianne; Nguyen, Anh Phuc Duc; Stesmans, Andre; Borghs, Gustaaf (2011)