Browsing Articles by imec author "fd3930f7eb72d06dd561a45f72c18b5e5b997c0c"
Now showing items 41-60 of 150
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Electrical modeling and characterization of through silicon via for three-dimensional ICs
Katti, Guruprasad; Stucchi, Michele; De Meyer, Kristin; Dehaene, Wim (2010) -
Electrical TCAD simulation of a germanium pMOSFET technology
Hellings, Geert; Eneman, Geert; Krom, Raymond; De Jaeger, Brice; Mitard, Jerome; De Keersgieter, An; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2010) -
Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure
Li, Zilan; Houssa, Michel; Schram, Tom; De Gendt, Stefan; De Meyer, Kristin (2009) -
Enhanced tunneling current effect for nonvolatile memory applications
Govoreanu, Bogdan; Blomme, Pieter; Van Houdt, Jan; De Meyer, Kristin (2003-04) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Exploring the limits of stress-enhanced hole mobility
Smith, Lee; Moroz, Victor; Eneman, Geert; Verheyen, Peter; Nouri, Faran; Washington, Lori; Jurczak, Gosia; Penzin, Oleg; Pramanik, Dipu; De Meyer, Kristin (2005-09) -
Extraction of the top and sidewall mobility in FinFETs and the impact of fin-patterning processes and gate dielectrics on mobility
Iyengar, Vikram V.; Kottantharayil, Anil; Tranjan, Farid M.; Jurczak, Gosia; De Meyer, Kristin (2007) -
Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
Loo, Roger; Collaert, Nadine; Verheyen, Peter; Caymax, Matty; Delhougne, Romain; De Meyer, Kristin (2004) -
Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Eneman, Geert; Verheyen, Peter; Rooyackers, Rita; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
FinFET analogue characterization from DC to 110 GHz
Lederer, Dimitri; Kilchytska, V.; Rudenko, T.; Collaert, Nadine; Flandre, D.; Dixit, Abhisek; De Meyer, Kristin; Raskin, J.P. (2005) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02) -
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Li, Zilan; Schram, Tom; Pantisano, Luigi; Witters, Thomas; Stesmans, Andre; Akheyar, Amal; Afanasiev, Valeri; Yamada, Naoki; Tsunoda, Takaaki; De Gendt, Stefan; De Meyer, Kristin (2007) -
Gate influence on the layout sensitivity of Si1-xGex S/D and Si1-yCy S/D transistors, including an analytical model
Eneman, Geert; Simoen, Eddy; Verheyen, Peter; De Meyer, Kristin (2008) -
General 2D Schroedinger-Poisson solver with open boundary conditions for nanoscale CMOS transistors
Pourghaderi, Mohammad Ali; Magnus, Wim; Soree, Bart; De Meyer, Kristin; Meuris, Marc; Heyns, Marc (2008) -
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Sibaja-Hernandez, Arturo; You, Shuzhen; Van Huylenbroeck, Stefaan; Venegas, Rafael; De Meyer, Kristin; Decoutere, Stefaan (2011) -
High FET performance for a future CMOS GeO2-based technology
Bellenger, Florence; De Jaeger, Brice; Merckling, Clement; Houssa, Michel; Penaud, Julien; Nyns, Laura; Vrancken, Evi; Caymax, Matty; Meuris, Marc; Hoffmann, Thomas Y.; De Meyer, Kristin; Heyns, Marc (2010) -
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011) -
High performance 70 nm germanium pMOSFETs with boron LDD implants
Hellings, Geert; Mitard, Jerome; Eneman, Geert; De Jaeger, Brice; Brunco, David; Shamiryan, Denis; Vandeweyer, Tom; Meuris, Marc; Heyns, Marc; De Meyer, Kristin (2009) -
High performance Si/SiGE pMOSFETs fabricated in a standard CMOS process technology
Collaert, Nadine; Verheyen, Peter; De Meyer, Kristin; Loo, Roger; Caymax, Matty (2003)