Browsing Presentations by imec author "c65d3adf13d58c6e61a3a1b6267ea55bceb81267"
Now showing items 1-13 of 13
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Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Rosseel, Erik; Everaert, Jean-Luc; Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vandervorst, Wilfried (2011) -
Conformal doping for FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas Y.; Eyben, Pierre; Mody, Jay; Koelling, Sebastian; Gilbert, Matthieu; Pawlak, Bartek; Duffy, R.; Van Dal, Mark (2008) -
Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019) -
Epitaxial growth schemes for fin and Gate All Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Langer, Robert (2017) -
Epitaxial growth schemes for logic devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Langer, Robert (2018) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
Laser anneal PEB: a viable route to RLS improvement
Younkin, Todd; Rosseel, Erik; Gronheid, Roel (2012) -
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Nguyen, N.D.; Souriau, Laurent; Shimizu, Y.; Jiang, Sijia; Rosseel, Erik; Everaert, Jean-Luc; Moussa, Alain; Clarysse, Trudo; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2011) -
New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology
Ortolland, Claude; Togo, Mitsuhiro; Rosseel, Erik; Mertens, Sofie; Kittl, Jorge; Lauwers, Anne; Hoffmann, Thomas Y. (2010) -
Non-contact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric
Everaert, Jean-Luc; Rosseel, Erik; Pap, Aron; Meszaros, Albert; Dekoster, Johan; Pavelka, Tibor (2010) -
Non-destructive characterization of activated ion-implanted doping profiles based on photomodulated optical reflectance
Bogdanowicz, Janusz; Clarysse, Trudo; Moussa, Alain; Mody, Jay; Eyben, Pierre; Vandervorst, Wilfried; Rosseel, Erik (2010) -
The thickness and temperature dependent resistivity of thin copper films
Zhang, Wenqi; Brongersma, Sywert; Clarysse, Trudo; Wu, Wen; Vervoort, Iwan; Palmans, Roger; Hoflijk, Ilse; Bender, Hugo; Hui, W.; Carbonell, Laure; Rosseel, Erik; Vandervorst, Wilfried; Maex, Karen (2003) -
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Porret, Clément; Vohra, Anurag; Hikavyy, Andriy; Rosseel, Erik; Huang, Yan-Hua; Tirrito, Matteo; Kohen, David; Margetis, Joe; Tolle, John; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Langer, Robert; Loo, Roger (2019)