Browsing by Author "Afanas'ev, V. V."
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Publication Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Journal article2002, Journal of Applied Physics, (91) 5, p.3079-3084Publication Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
Journal article2022, SOLID-STATE ELECTRONICS, 194, p.108388Publication Defect generation in Si/Sio2/Zro2/Tin structures: the possible role of hydrogen
Journal article2001, Semiconductor Science and Technology, (16) 12, p.L93-L96Publication Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model
Journal article2001, Microelectronic Engineering, (59) 1_4, p.367-372Publication Electrical and physical characterization of high-k dielectric layers
Proceedings paper2001, International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 18/04/2001, p.196-199Publication Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3 , and ZrO2 insulators
Journal article2001, Applied Physics Letters, (78) 20, p.3073-3075Publication Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2
Oral presentation2001, 31st IEEE Semiconductor Interface Specialists Conference; 7-9 December 2001; San Diego, CA, USA.Publication Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
Journal article2021, SOLID-STATE ELECTRONICS, 183, p.108066Publication Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
Journal article2011-12, Journal of Applied Physics, (110) 11, p.113724Publication Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
Journal article2001, Microelectronic Engineering, (59) 1_4, p.335-340Publication Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures
Journal article2021, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (54) 29, p.295101Publication Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding
Proceedings paper2020, 22nd IEEE Electronics Packaging Technology Conference (EPTC), DEC 02-29, 2020, p.464-467Publication Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
Journal article2021, SOLID-STATE ELECTRONICS, 183, p.108033Publication Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Journal article2001, Applied Physics Letters, (79) 19, p.3134-3136Publication Processing Stability of Monolayer WS2 on SiO2
Journal article2021, NANO EXPRESS, (2) 2, p.024004Publication Shallow electron traps in high-k insulating oxides
Journal article2021, SOLID-STATE ELECTRONICS, 183, p.108052Publication Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Journal article2011, Applied Physics Letters, (99) 17, p.172101Publication Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
Journal article2000, Applied Physics Letters, (77) 12, p.1885-1887