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Browsing by Author "Afanas'ev, V. V."

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    Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

    Afanas'ev, V. V.
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    Houssa, Michel  
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    Stesmans, Andre  
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    Heyns, Marc  
    Oral presentation
    2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
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    Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Afanas'ev, V. V.
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    Houssa, Michel  
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    Stesmans, Andre  
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    Heyns, Marc  
    Journal article
    2002, Journal of Applied Physics, (91) 5, p.3079-3084
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    Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4

    Izmailov, R. A.
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    O'Sullivan, Barry  
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    Popovici, Mihaela Ioana  
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    Afanas'ev, V. V.
    Journal article
    2022, SOLID-STATE ELECTRONICS, 194, p.108388
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    Defect generation in Si/Sio2/Zro2/Tin structures: the possible role of hydrogen

    Houssa, Michel  
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    Afanas'ev, V. V.
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    Stesmans, Andre  
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    Heyns, Marc  
    Journal article
    2001, Semiconductor Science and Technology, (16) 12, p.L93-L96
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    Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model

    Houssa, Michel  
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    Afanas'ev, V. V.
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    Stesmans, Andre  
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    Heyns, Marc  
    Journal article
    2001, Microelectronic Engineering, (59) 1_4, p.367-372
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    Electrical and physical characterization of high-k dielectric layers

    Houssa, Michel  
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    Naili, Mohamed
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    Afanas'ev, V. V.
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    Heyns, Marc  
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    Stesmans, Andre  
    Proceedings paper
    2001, International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 18/04/2001, p.196-199
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    Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3 , and ZrO2 insulators

    Afanas'ev, V. V.
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    Houssa, Michel  
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    Stesmans, Andre  
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    Heyns, Marc  
    Journal article
    2001, Applied Physics Letters, (78) 20, p.3073-3075
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    Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si

    Stesmans, Andre  
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    Afanas'ev, V. V.
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    Houssa, Michel  
    Oral presentation
    2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
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    Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2

    Stesmans, Andre  
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    Afanas'ev, V. V.
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    Houssa, Michel  
    Oral presentation
    2001, 31st IEEE Semiconductor Interface Specialists Conference; 7-9 December 2001; San Diego, CA, USA.
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    Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

    Izmailov, R. A.
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    O'Sullivan, Barry  
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    Popovici, Mihaela Ioana  
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    Afanas'ev, V. V.
    Journal article
    2021, SOLID-STATE ELECTRONICS, 183, p.108066
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    Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

    Chou, H. Y.
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    Badylevich, M.
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    Afanas'ev, V. V.
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    Houssa, M.
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    Stesmans, A.
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    Meersschaut, Johan  
    Journal article
    2011-12, Journal of Applied Physics, (110) 11, p.113724
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    Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

    Afanas'ev, V. V.
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    Houssa, Michel  
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    Stesmans, Andre  
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    Adriaenssens, G. J.
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    Heyns, Marc  
    Journal article
    2001, Microelectronic Engineering, (59) 1_4, p.335-340
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    Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

    Shlyakhov, I
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    Achra, Swati  
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    Bosman, N.
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    Asselberghs, Inge  
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    Huyghebaert, Cedric  
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    Radu, Iuliana  
    Journal article
    2021, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (54) 29, p.295101
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    Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding

    Peng, Lan  
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    Kim, Soon-Wook  
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    Iacovo, Serena  
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    De Vos, Joeri  
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    Schoenaers, B.
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    Stesmans, A.
    Proceedings paper
    2020, 22nd IEEE Electronics Packaging Technology Conference (EPTC), DEC 02-29, 2020, p.464-467
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    Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures

    Delie, G.
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    Shlyakhov, I.
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    Iakoubovskii, K.
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    Afanas'ev, V. V.
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    Achra, Swati  
    Journal article
    2021, SOLID-STATE ELECTRONICS, 183, p.108033
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    Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks

    Houssa, Michel  
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    Afanas'ev, V. V.
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    Stesmans, Andre  
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    Heyns, Marc  
    Journal article
    2001, Applied Physics Letters, (79) 19, p.3134-3136
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    Processing Stability of Monolayer WS2 on SiO2

    Delie, G.
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    Chiappe, D.
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    Asselberghs, Inge  
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    Huyghebaert, Cedric  
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    Radu, Iuliana  
    Journal article
    2021, NANO EXPRESS, (2) 2, p.024004
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    Shallow electron traps in high-k insulating oxides

    Izmailov, R. A.
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    O'Sullivan, Barry  
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    Popovici, Mihaela Ioana  
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    Kittl, J. A.
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    Afanas'ev, V. V.
    Journal article
    2021, SOLID-STATE ELECTRONICS, 183, p.108052
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    Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

    Afanas'ev, V. V.
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    Chou, H.-Y.
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    Houssa, M.
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    Lamagna, L.
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    Lamperti, A.
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    Molle, A.
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    Vincent, Benjamin  
    Journal article
    2011, Applied Physics Letters, (99) 17, p.172101
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    Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Houssa, Michel  
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    Afanas'ev, V. V.
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    Stesmans, Andre  
    ;
    Heyns, Marc  
    Journal article
    2000, Applied Physics Letters, (77) 12, p.1885-1887

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