Browsing by Author "Alian, Alireza"

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications

Parasitic side channel formation due to ion implantation isolation of GaN HEMT

Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostructures