Browsing by Author "Asenov, Asen"
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Publication 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Proceedings paper2010-10, IEEE International Integrated Reliability Workshop - IIRW, 17/10/2010, p.76-79Publication Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part I: CNFET Transistor Optimization
Journal article2022, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, (30) 4, p.432-439Publication Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part II: CNT Interconnect Optimization
Journal article2022, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, (30) 4, p.440-448Publication Circuit-level modeling of Finfet sub-threshold slope and DIBL mismatch beyond 22nm
Proceedings paper2013, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 3/09/2013, p.204-207Publication Design and analysis of a new In53Ga47As implant-free quantum-well device structure
Meeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials, 7/06/2010Publication Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure
Journal article2011, Microelectronic Engineering, (88) 4, p.358-361Publication Experimental evidences and simulations of trap generation along the percolation path
Proceedings paper2015, 45th European Solid State Device Research Conference - ESSDERC, 14/09/2015, p.226-229Publication Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
Journal article2012, IEEE Electron Device Letters, (33) 6, p.779-781Publication Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures
Journal article2010, Microelectronics Reliability, (50) 3, p.360-364Publication Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
Journal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3265-3273Publication Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Journal article2017, IEEE Transactions on Electron Devices, (64) 6, p.2478-2484Publication Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance
Proceedings paper2010, Silicon Nanoelectronics Workshop, 13/06/2010, p.17-18Publication New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Journal article2013, IEEE Transactions on Electron Devices, (60) 8, p.2505-2511Publication Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach
Publication Reliability aware simulation flow: from TCAD calibration to circuit level analysis
Proceedings paper2015, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2015, p.152-155Publication Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
Publication TCAD-based methodology for reliability assessment of nanoscaled MOSFETs
Proceedings paper2015, 11th Conference on Ph.D. Research in Microelectronics and Electronics - PRIME, 29/06/2015, p.270-273Publication Terascale Reliable Adaptive Memory Systems Project (TRAMS)
Publication The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.5A.2.1-5A.2.6Publication TRAMS : Terascale reliable adaptive memory systems
Oral presentation2011, FET'11, The European Future Technologies Conference and Exhibition