Browsing by Author "Autran, J.L."

A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics

Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks

Detrimental impact of hydrogen on negative bias temperature instabilities in HfO2-based pMOSFETs

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Electrical characterization, modelling and simulation of MOS structures with high-k gate stacks

Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack

Electron transport through high-k dielectric barriers: A non-equilibrium Green's function (NEGF) study

Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects

Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures

Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors

Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics