Browsing by Author "Bailey, P."
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Publication Characterization of low energy (2-5keV) implantation into Si
Oral presentation2002, Ion Implantation ConferencePublication Damage accumulation and dopant migration during shallow As and Sb implantation into Si
Journal article2004, Nuclear Instruments & Methods in Physics Research B, 216, p.67-74Publication High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si
Proceedings paper2002, Proceedings 14th International Conference on Ion Implantation Technology Conference, 22/09/2002, p.597-600Publication High depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS
;van den Berg, J.A. ;Reading, M.A. ;Parisini, A. ;Kolbe, M. ;Beckhoff, B. ;Ladas, S.Petrik, P.Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.1994Publication High depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS
;van den Berg, J.A. ;Reading, M. A. ;Parisini, A. ;Kolbe, M. ;Beckhoff, B. ;Ladas, S.Fried, M.Proceedings paper2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6, 4/10/2009, p.349-361Publication High resolution medium energy ion scattering (MEIS) analysis for the quantitative depth profiling of ultra thin high-k layers
;Reading, M. A. ;van den Berg, J. A. ;Zalm, P. C. ;Armour, D. G. ;Bailey, P. ;Noakes, T. C. Q.Parisini, A.Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1C65-C1C70Publication High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultra thin high-k Hf based films
Meeting abstract2009, 5th International Workshop on High-Resolution Depth Profiling, 15/11/2009Publication High resolution, quantitative depth profiling analysis of nm thin hgh-k dielectriclayers using medium energy ion scattering (MEIS)
Proceedings paper2009, 19th Ion Beam Analysis Conference - IBA, 7/09/2009Publication Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si
Meeting abstract2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.446Publication Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
Journal article2015, Microelectronic Engineering, 147, p.108-112