Browsing by Author "Beckhoff, Burkhard"

A compact vibration reduced set-up for scanning nm-XRF and STXM

ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry

ALD on high mobility channels: engineering the proper gate stack passivation

ALD on high mobility channels: engineering the proper gate stack passivation

Aluminium oxide atomic layer deposition on semiconductor substrates

Atomic layer deposition of Al2O3 on S-passivated Ge

Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium

Characterization of semiconductor samples using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Development and reference-free characterization of 3D nanostructures as potential calibration sample for analytical techniques

Development and synchrotron-based characterization of Al and Cr nanostructures as potential calibration samples for 3D analytical techniques

Grazing incidence X-ray fluorescence analysis for the characterization of Ge1-xSnx thin films

Liquid-phase adsorption of sulfur on germanium: reaction mechanism and atomic geometry

Mechanism of modification of fluorocarbon polymer by ultraviolet irradiation in oxygen atmosphere

NEXAFS characterization of inorganic and organic materials for semiconductor application

Quantification of high-K nanolayers for semiconductor applications using synchrotron radiation and calibrated instrumentation

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Reference-free, depth dependent characterization of nanoscale materials by combined X-ray reflectivity and grazing incidence X-ray fluorescence analysis

Reference-free, depth-dependent characterization of nanoscaled materials using a combined grazing incidence X-ray fluorescence and X-ray reflectometry approach

Reference-free, in-depth characterization of nanoscaled systems with advanced grazing incidence X-ray fluorescence analysis

S-passivation of the Ge gate stack using (NH4)2S