imec Institutional Repository Browsing {{ collection }} by Author "Buca, D."

Publication

Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers

Buca, D.

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Hollander, B.

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Feste, S.

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Lenk, S.

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Trinkaus, H.

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Mantl, S.

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Loo, Roger

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Caymax, Matty

Journal article

2007-01, Applied Physics Letters, (90) 3, p.32108

Publication

Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM

Hueging, N.

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Luysberg, M.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Oral presentation

2004, Dislocation Meeting

Publication

Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer

Buca, D.

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Goryll, M.

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Hollaender, B.

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Trinkaus, H.

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Mantl, S.

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Loo, Roger

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Nguyen, Duy

Oral presentation

2007, MRS 2007 Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II

Publication

Fabrication and characterization of strained Si-on-insulator (sSOI)

Zhao, Q.T.

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Buca, D.

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Feste, S.

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Goryll, M.

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Loo, Roger

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Reiche, M.

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Mantl, S.

Proceedings paper

2007, 8th European Workshop on ULtimate Integration of Silicon - ULIS, 14/03/2007

Publication

Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

Driussi, F.

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Esseni, D.

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Selmi, L.

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Schmidt, M.

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Lemme, M.

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Kurz, H.

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Buca, D.

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Mantl, S.

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Luysberg, M.

Proceedings paper

2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318

Publication

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

Zhao, Q.T.

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Buca, D.

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Lenk, S.

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Loo, Roger

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Caymax, Matty

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Mantl, S.

Journal article

2004, Microelectronic Engineering, (76) 1_4, p.285-289

Publication

Growth of strained Si on He ion implanted Si/SiGe heterostructures

Buca, D.

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Feste, S.

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Hollander, B.

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Mantl, S.

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Loo, Roger

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Caymax, Matty

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Carius, R.

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Schaefer, H.

Proceedings paper

2005-04, 6th European Conference on Integration in Silicon - ULIS, 7/04/2005, p.11-14

Publication

He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles

Luysberg, M.

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Hueging, N.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Proceedings paper

2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.117-118

Publication

Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Buca, D.

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Trinkaus, H.

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Holländer, B.

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Loo, Roger

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Nguyen, Duy

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Mantl, S.

Proceedings paper

2008, 4th International SiGe Technology and Device Meeting, 11/05/2008, p.40-41

Publication

In-situ TEM on He implantation induced defects in SiGe/Si

Luysberg, Martina

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Hueging, N.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Proceedings paper

2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378

Publication

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen, Peng

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Chu, Paul K.

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Hochbauer, T.

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Lee, J-K

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Nastasi, M.

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Buca, D.

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Mantl, S

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Loo, Roger

Journal article

2005, Applied Physics Letters, (86) 3, p.031904-1-031904-3

Publication

Large current enhancement in n-MOSFETs with strained Si on insulator

Mantl, S.

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Buca, D.

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Zhao, Q.T.

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Hollaender, B.

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Feste, S.

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Luysberg, M.

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Reiche, M.

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Gösele, U.

Proceedings paper

2007, International Semiconductor Device Research Symposium - ISDRS, 12/12/2007

Publication

Overgrowth and defect characterization of strained Si/SiGe heterostructures on Si(100)

Mantl, S

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Buca, D.

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Feste, S.

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Hollander, B.

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Lenk, St.

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Loo, Roger

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Caymax, Matty

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Carius, R.

Proceedings paper

2005-05, 4th International Conference on Silicon Epitaxy and Heterostructures - ICSI-4, 23/05/2005, p.36-37

Publication

Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

Chen, Peng

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Chu, Paul K.

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Höchbauer, T.

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Nastasi, M.

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Buca, D.

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Mantl, S.

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Theodore, N. David

Journal article

2004, Applied Physics Letters, (85) 21, p.4944-4946

Publication

Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy

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Schulte-Braucks, C.

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Lin, Dennis

Journal article

2016, ECS Journal of Solid State Science and Technology, (5) 4, p.P3031-P3036

Publication

Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation

Holländer, B.

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Buca, D.

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Mörschbächer, M.

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Lenk, St.

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Mantl, S.

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Herzog, H.J.

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Hackbarth, Th.

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Loo, Roger

Journal article

2004, Journal of Applied Physics, (96) 3, p.1745-1747

Publication

Strained Si on relaxed SiGe made by ion implantation and strain transfer

Mantl, S.

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Buca, D.

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Holländer, B.

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Mörschbächer, M.

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Trinkhaus, H.

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Luysberg, M.

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Hueging, N.

Proceedings paper

2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740

Publication

Strained Si-on-insulator for advanced CMOS devices

Mantl, S.

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Buca, D.

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Zhao, Q.T.

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Hollander, B.

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Feste, S.

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Luysberg, M.

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Reiche, M.

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Gosele, U.

Oral presentation

2007, 4th Int. Workshop on Future Information Processing Technology - IWFIPT

Publication

Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation

Reiche, M.

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Moutanabbir, O.

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Himcinschi, C.

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Christiansen, S.

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Erfurth, E.

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Goesele, U.

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Mantl, S.

Proceedings paper

2008, Semiconductor Wafer Bonding 10: Science, Technology, and Applications, 12/10/2008, p.311-320

Publication

Strained silicon-on-insulator : fabrication and characterization

Reiche, M.

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Himcinschi, C.

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Goesele, U.

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Christiansen, S.

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Mantl, S.

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Buca, D.

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Zhao, Q. T.

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Feste, S.

Proceedings paper

2007, Silicon-on-Insulator Technology and Devices 13, 6/05/2007, p.339-344

Browsing by Author "Buca, D."