Browsing by Author "Chen, Yangyin"
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Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
Journal article2012, Applied Physics Letters, (100) 4, p.43507Publication a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
; ; ; ; Proceedings paper2015, IEEE Symposium on VLSI Technology, 16/06/2015, p.132-133Publication Analysis of complementary RRAM switching
Journal article2012, IEEE Electron Device Letters, (33) 8, p.1186-1188Publication Asymmetry and switching phenomenology in TiN(Al2O3)\HfO2\Hf systems
Journal article2012-08, ECS Solid State Letters, (1) 4, p.P63-P65Publication Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Journal article2012, IEEE Transactions on Electron Devices, (59) 12, p.3243-3249Publication Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Journal article2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192Publication De-process and physical characterization of HfO2 based resistive memory as studied by C-AFM
Meeting abstract2012, ECS Fall Meeting Symposium E11: Nonvolatile Memories, 7/10/2012, p.2847Publication Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics
Meeting abstract2015, MRS Spring Meeting Symposium AA: Materials for Beyond the Roadmap Devices in Logic, Power and Memory, 6/04/2015Publication Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
; ; ; ; ; Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.75-76Publication Effect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM
Proceedings paper2010, International Symposium on VLSI Technology Systems and Applications - VLSI-TSA, 26/04/2010, p.140-141Publication Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Journal article2015, Applied Physics Letters, (106) 5, p.53501Publication Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Journal article2013, IEEE Transactions on Electron Devices, (60) 3, p.1114-1121Publication Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Proceedings paper2014, IEEE 6th International Memory Workshop - IMW, 18/05/2014, p.1-4Publication Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
; ; ; ; ; Journal article2014, ECS Solid State Letters, (3) 11, p.Q79-Q81Publication Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Journal article2010, Applied Physics Letters, (97) 24, p.243509Publication Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching
Proceedings paper2016, IEEE International Reliability Physics Symposium - iRPS, 17/04/2016, p.6C.2Publication Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.69-70Publication Filament observation in metal-oxide resistive switching devices
Journal article2013, Applied Physics Letters, (102) 12, p.121602