Browsing by Author "Crupi, Felice"
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Publication A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Journal article2016, IEEE Transactions on Device and Materials Reliability, (16) 1, p.98-100Publication A defect-centric perspective on channel hot carrier variability in nMOSFETs
Journal article2015, Microelectronic Engineering, 147, p.72-74Publication A new physically-based model for temperature acceleration of time-to-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics
Journal article2005, IEEE Trans. Electron Devices, (52) 8, p.1759-1765Publication An inelastic quantum tunnelling model for current conduction after soft-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication Analysis of Signal Processing Methods to Reject the DC Offset Contribution of Static Reflectors in FMCW Radar-Based Vital Signs Monitoring
Journal article2022, SENSORS, (22) 24, p.22Publication Automatic radar-based 2-D localization exploiting vital signs signatures
Journal article2022, SCIENTIFIC REPORTS, (12) 1, p.Art. 7651Publication Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Journal article2014, IEEE Electron Device Letters, (35) 7, p.720-722Publication BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Journal article2012, Microelectronics Reliability, (52) 9_10, p.1932-1935Publication Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Journal article2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (20) 8, p.1487-1495Publication Characteristics and correlated fluctuations of the gate and substrate current after soft oxide breakdown
Proceedings paper1998, Proceedings Solid State Devices and Materials Conference; September 1998; Hiroshima, Japan.Publication Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
Journal article2001, IEEE Trans. Electron Devices, (48) 6, p.1109-1113Publication Correlation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack
Proceedings paper2004, Proceedings IEEE International Reliability Physics Symposium - IRPS, 25/04/2004, p.181-187Publication Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs
Journal article2014, IEEE Electron Device Letters, (35) 12, p.1167-1169Publication Early assessment of emerging technologies for VLSI logic circuits from experimental measurements
Proceedings paper2012, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 29/10/2012Publication Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
Proceedings paper2011, IEEE International Symposium on Circuits and Systems - ISCAS, 15/05/2011, p.2249-2252Publication Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Journal article2013, Journal of Applied Physics, (114) 7, p.74509Publication Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
;Magnone, Paolo ;Crupi, Felice ;Pantisano, LuigiPace, CalogeroJournal article2007, Applied Physics Letters, (90) 7, p.73507Publication Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices
Journal article2008, Microelectronic Engineering, (85) 3, p.1728-1731Publication High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.249-252
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