Browsing by Author "Crupi, Felice"
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Publication A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Journal article2016, IEEE Transactions on Device and Materials Reliability, (16) 1, p.98-100Publication A defect-centric perspective on channel hot carrier variability in nMOSFETs
Journal article2015, Microelectronic Engineering, 147, p.72-74Publication A new physically-based model for temperature acceleration of time-to-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics
Journal article2005-08, IEEE Trans. Electron Devices, (52) 8, p.1759-1765Publication An inelastic quantum tunnelling model for current conduction after soft-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication Analysis of Signal Processing Methods to Reject the DC Offset Contribution of Static Reflectors in FMCW Radar-Based Vital Signs Monitoring
Journal article2022-12-10, SENSORS, (22) 24, p.22Publication Automatic radar-based 2-D localization exploiting vital signs signatures
Journal article2022, SCIENTIFIC REPORTS, (12) 1, p.Art. 7651Publication Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Journal article2014, IEEE Electron Device Letters, (35) 7, p.720-722Publication BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Journal article2012, Microelectronics Reliability, (52) 9_10, p.1932-1935Publication Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Journal article2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (20) 8, p.1487-1495Publication Characteristics and correlated fluctuations of the gate and substrate current after soft oxide breakdown
Proceedings paper1998, Proceedings Solid State Devices and Materials Conference; September 1998; Hiroshima, Japan.Publication Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
Journal article2001, IEEE Trans. Electron Devices, (48) 6, p.1109-1113Publication Correlation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack
Proceedings paper2004-04, Proceedings IEEE International Reliability Physics Symposium - IRPS, 25/04/2004, p.181-187Publication Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs
Journal article2014, IEEE Electron Device Letters, (35) 12, p.1167-1169Publication Early assessment of emerging technologies for VLSI logic circuits from experimental measurements
Proceedings paper2012, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 29/10/2012Publication Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
Proceedings paper2011, IEEE International Symposium on Circuits and Systems - ISCAS, 15/05/2011, p.2249-2252Publication Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Journal article2013, Journal of Applied Physics, (114) 7, p.74509Publication Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
;Magnone, Paolo ;Crupi, Felice ;Pantisano, LuigiPace, CalogeroJournal article2007-02, Applied Physics Letters, (90) 7, p.73507Publication Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices
Journal article2008, Microelectronic Engineering, (85) 3, p.1728-1731Publication High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.249-252
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