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Browsing by Author "Crupi, Felice"

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    A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs

    Procel, Luis Miguel
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    Crupi, Felice
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    Lionel, Trojman
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    Franco, Jacopo  
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    Kaczer, Ben  
    Journal article
    2016, IEEE Transactions on Device and Materials Reliability, (16) 1, p.98-100
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    A defect-centric perspective on channel hot carrier variability in nMOSFETs

    Procel, Luis Miguel
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    Crupi, Felice
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    Franco, Jacopo  
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    Trojman, Lionel
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    Kaczer, Ben  
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    Wils, N.
    Journal article
    2015, Microelectronic Engineering, 147, p.72-74
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    A new physically-based model for temperature acceleration of time-to-breakdown

    Pangon, Nadège
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    Degraeve, Robin  
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    Roussel, Philippe  
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    Groeseneken, Guido  
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    Maes, Herman
    Oral presentation
    1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.
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    A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

    Crupi, Felice
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Pantisano, Luigi
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    Groeseneken, Guido  
    Journal article
    2005-08, IEEE Trans. Electron Devices, (52) 8, p.1759-1765
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    An inelastic quantum tunnelling model for current conduction after soft-breakdown

    Nigam, Tanya
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    Degraeve, Robin  
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    Heyns, Marc  
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    Groeseneken, Guido  
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    Maes, Herman
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    Crupi, Felice
    Oral presentation
    1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.
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    Analysis of Signal Processing Methods to Reject the DC Offset Contribution of Static Reflectors in FMCW Radar-Based Vital Signs Monitoring

    Mercuri, Marco
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    Torfs, Tom  
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    Rykunov, Maxim  
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    Laureti, Stefano
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    Ricci, Marco
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    Crupi, Felice
    Journal article
    2022-12-10, SENSORS, (22) 24, p.22
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    Automatic radar-based 2-D localization exploiting vital signs signatures

    Mercuri, Marco
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    Russo, Pietro  
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    Glassee, Miguel  
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    Castro Miller, Ivan Dario  
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    De Greef, Eddy  
    Journal article
    2022, SCIENTIFIC REPORTS, (12) 1, p.Art. 7651
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    Border traps in InGaAs nMOSFETs assessed by low-frequency noise

    Scarpino, Mercedes
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    Gupta, Somya
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    Lin, Dennis  
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    Alian, AliReza  
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    Crupi, Felice
    ;
    Collaert, Nadine  
    Journal article
    2014, IEEE Electron Device Letters, (35) 7, p.720-722
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    BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic

    Franco, Jacopo  
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    Graziano, Salvatore
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    Kaczer, Ben  
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    Crupi, Felice
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    Ragnarsson, Lars-Ake  
    Journal article
    2012, Microelectronics Reliability, (52) 9_10, p.1932-1935
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    Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling

    Crupi, Felice
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    Alioto, Massimo
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    Franco, Jacopo  
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    Magnone, Paolo
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    Kaczer, Ben  
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    Groeseneken, Guido  
    Journal article
    2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (20) 8, p.1487-1495
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    Characteristics and correlated fluctuations of the gate and substrate current after soft oxide breakdown

    Crupi, Felice
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    Degraeve, Robin  
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    Groeseneken, Guido  
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    Nigam, Tanya
    ;
    Maes, Herman
    Proceedings paper
    1998, Proceedings Solid State Devices and Materials Conference; September 1998; Hiroshima, Japan.
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    Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

    Crupi, Felice
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    Iannaccone, G.
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    Crupi, Isodiana
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    Degraeve, Robin  
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    Groeseneken, Guido  
    Journal article
    2001, IEEE Trans. Electron Devices, (48) 6, p.1109-1113
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    Correlation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack

    Crupi, Felice
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    Degraeve, Robin  
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    Kerber, Andreas
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    Kwak, Dong Hwa
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    Groeseneken, Guido  
    Proceedings paper
    2004-04, Proceedings IEEE International Reliability Physics Symposium - IRPS, 25/04/2004, p.181-187
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    Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs

    Procel, Luis Miguel
    ;
    Crupi, Felice
    ;
    Franco, Jacopo  
    ;
    Trojman, Lionel
    ;
    Kaczer, Ben  
    Journal article
    2014, IEEE Electron Device Letters, (35) 12, p.1167-1169
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    Early assessment of emerging technologies for VLSI logic circuits from experimental measurements

    Crupi, Felice
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    Magnone, Paolo
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    Alioto, Massimo
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    Franco, Jacopo  
    ;
    Groeseneken, Guido  
    Proceedings paper
    2012, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 29/10/2012
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    Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

    Crupi, Felice
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    Alioto, Massimo
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    Franco, Jacopo  
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    Magnone, Paolo
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    Kaczer, Ben  
    ;
    Groeseneken, Guido  
    Proceedings paper
    2011, IEEE International Symposium on Circuits and Systems - ISCAS, 15/05/2011, p.2249-2252
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    Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

    Procel, Luis Miguel
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    Trojman, Lionel
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    Moreno, J.
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    Crupi, Felice
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    Maccaronio, V.
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    Degraeve, Robin  
    Journal article
    2013, Journal of Applied Physics, (114) 7, p.74509
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    Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise

    Magnone, Paolo
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    Crupi, Felice
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    Pantisano, Luigi
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    Pace, Calogero
    Journal article
    2007-02, Applied Physics Letters, (90) 7, p.73507
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    Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

    Magnone, Paolo
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    Subramanian, Vaidy
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    Parvais, Bertrand  
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    Mercha, Abdelkarim  
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    Pace, Calogero
    Journal article
    2008, Microelectronic Engineering, (85) 3, p.1728-1731
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    High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD

    Mitard, Jerome  
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    Witters, Liesbeth  
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    Garcia Bardon, Marie  
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    Christie, Phillip  
    ;
    Franco, Jacopo  
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.249-252
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