Browsing by Author "Cuduvally, Ramya"

3D imaging of atom probe tip shapes with atomic force microscopy

A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon

Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines

Analysis of III-nitride device heterostructures using APT

Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN

Atom probe of GaN/AlGaN heterostructures: the role of electric field, sample crystallography and laser excitation on quantification

Correcting the boron concentration for the detection losses through multi hit events.

Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN

Influence of the tip field, laser, pole and zone lines on the quantification of GaN/AlGaN heterostructures

Opportunities and challenges in APT metrology for semiconductor applications

Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Post-Ionization of Silicon Clusters in Atom Probe Microscopy: A Joint Theoretical and Experimental Investigation.

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Potential sources of inaccuracy for the composition quantification of InGaAs and InAlAs

Quantitative compositional analysis of compound semiconductors by atom probe tomography

Revealing the 3-dimensional shape of atom probe tips by atomic force microscopy

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)

Towards accurate composition analysis of GaN and AlGaN using Atom Probe Tomography