Browsing by Author "Dachs, Charles"
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Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
; ; Publication A manufacturable 25nm planar MOSFET technology
Publication A practical baseline process for advanced CMOS devices research
Proceedings paper2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30Publication CMOS device optimisation for mixed-signal technologies
Publication CMOS integration results for the 90nm technology node
Journal article2003, Semiconductor Fabtech, 18, p.129-132Publication CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.15-22Publication Gate dielectrics for high performance and low power CMOS SoC applications
Publication Laser annealing for ultra-shallow junction formation in advanced CMOS
Proceedings paper2002, Rapid Thermal And Other Short-Time Processing Technologies III, 12/05/2002, p.413-426Publication Pre-amorphization and co-implantation suitability for advanced PMOS devices integration
; ; ; Dachs, CharlesProceedings paper2003, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, 16/09/2003, p.740-741Publication RPN oxynitride gate dielectrics for 90nm low power CMOS applications
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.159-162Publication Shallow junctions for sub-100 nm CMOS technology
Publication Triple junctions for reduced impact of offset spacer variation on CMOS device parameters
Proceedings paper2004-09, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.145-148Publication Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003Publication Ultrashallow junctions for advanced CMOS technology