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Browsing by Author "ElKashlan, Rana Y."

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    A 24-31GHz Compact Low-Power Complex Impedance Sensor for Beamforming Transmitters in 22nm FD-SOI

    Wu, Xuepu  
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    Zhang, Yan
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    Mangraviti, Giovanni  
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    ElKashlan, Rana Y.  
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    Peumans, Dries  
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    Wambacq, Piet  
    Proceedings paper
    2025, 2025 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC, 2025-06-15, p.99-102
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    Advanced transistors for high frequency applications

    Parvais, Bertrand  
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    Peralagu, Uthayasankaran  
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    Alian, AliReza  
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    Vais, Abhitosh  
    Proceedings paper
    2020, 237th ECS Spring Meeting - Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.27-38
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    Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs

    ElKashlan, Rana Y.  
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    Rodriguez, Raul  
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    Yadav, Sachin  
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    Khaled, Ahmad  
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    Peralagu, Uthayasankaran  
    Journal article
    2020, IEEE Transactions on Electron Devices, (67) 11, p.4592-4596
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    Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

    Xiao, Dongping  
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    Schreurs, Dominique M. M. -P.
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    ElKashlan, Rana Y.  
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    Zhang, Yang  
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    Cooman, Adam  
    Journal article
    2025, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (73) 2, p.779-788
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    Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

    Yu, Hao  
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    Parvais, Bertrand  
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    Peralagu, Uthayasankaran  
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    ElKashlan, Rana Y.  
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    Rodriguez, Raul  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022
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    Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

    ElKashlan, Rana Y.  
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    Rodriguez, Raul  
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    Yadav, Sachin  
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    Peralagu, Uthayasankaran  
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    Alian, AliReza  
    Proceedings paper
    2022, IEEE/MTT-S International Microwave Symposium (IMS), JUN 19-24, 2022, p.910-913
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    Comparison of Two SOLR Calibration Approaches for Oscilloscope-Based S>-Parameter Measurements

    Smellie, Daanish  
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    ElKashlan, Rana Y.  
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    Khaled, Ahmad  
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    Parvais, Bertrand  
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    Schreurs, Dominique
    Proceedings paper
    2024, 54th European Microwave Conference (EuMC), SEP 24-26, 2024, p.952-955
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    DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

    Yadav, Sachin  
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    Vais, Abhitosh  
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    ElKashlan, Rana Y.  
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    Witters, Liesbeth  
    Proceedings paper
    2021, 15th European Microwave Integrated Circuits Conference (EuMIC) / 50th European Microwave Conference (EuMC), JAN 10-15, 2021, p.89-92
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    Evolution of GaN HEMT Small-Signal parameters during semi-on state for RF/mm-wave applications

    Rathi, Aarti  
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    O'Sullivan, Barry  
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    ElKashlan, Rana Y.  
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    Kazemi Esfeh, Babak  
    Proceedings paper
    2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30
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    From 5G to 6G: will compound semiconductors make the difference?

    Collaert, Nadine  
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    Alian, AliReza  
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    Banerjee, Aritra  
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    Chauhan, Vikas  
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    ElKashlan, Rana Y.  
    Proceedings paper
    2020, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 3/11/2020, p.406-409
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    GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

    Parvais, Bertrand  
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    Alian, AliReza  
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    Peralagu, Uthayasankaran  
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    Rodriguez, Raul  
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    Yadav, Sachin  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    III-V/III-N technologies for next generation high-capacity wireless communication

    Collaert, Nadine  
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    Alian, AliReza  
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    Banerjee, Aritra  
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    Boccardi, Guillaume  
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    Cardinael, Pieter  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022
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    Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

    Alian, Alireza
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    Rodriguez, Raul  
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    Yadav, Sachin  
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    Peralagu, Uthayasankaran  
    Proceedings paper
    2022, 52nd IEEE European Solid-State Device Research Conference (ESSDERC), SEP 19-22, 2022, p.384-387
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    InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications

    ElKashlan, Rana Y.  
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    Yu, Hao  
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    Peralagu, Uthayasankaran  
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    Yadav, Sachin  
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    Kazemi Esfeh, Babak  
    Proceedings paper
    2024, 50th IEEE European Solid-State Electronics Research Conference (ESSERC), SEP 09-12, 2024, p.241-244
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    Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz

    ElKashlan, Rana Y.  
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    Yadav, Sachin  
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    Khaled, Ahmad  
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    Xiao, Dongping  
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    Kazemi Esfeh, Babak  
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    Yu, Hao  
    Proceedings paper
    2024, IEEE/MTT-S International Microwave Symposium (IMS), JUN 16-21, 2024, p.948-951
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    Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

    ElKashlan, Rana Y.  
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    Khaled, Ahmad  
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    Rodriguez, Raul  
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    Putcha, Vamsi  
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    Peralagu, Uthayasankaran  
    Proceedings paper
    2021, 16th European Microwave Integrated Circuits Conference (EuMIC), APR 03-04, 2022, p.30-33
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    Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability

    Yu, Hao  
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    ElKashlan, Rana Y.  
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    Tsai, M. -C.
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    Yang, Y.
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    Guenach, M.
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    Kuo, Ying-Chun  
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    Yadav, Sachin  
    Proceedings paper
    2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30
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    RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

    ElKashlan, Rana Y.  
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    Khaled, Ahmad  
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    Rodriguez, Raul  
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    Sibaja-Hernandez, Arturo  
    Journal article
    2023, INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, (15) 6, p.983-992
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    The revival of compound semiconductors and how they will change the world in a 5G/6G era

    Collaert, Nadine  
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    Alian, AliReza  
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    Banerjee, Aritra  
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    Chauhan, Vikas  
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    ElKashlan, Rana Y.  
    Meeting abstract
    2020, ECS PRIME: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, 4/10/2020, p.15-26
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    Transistor modelling for mm-Wave technology pathfinding

    Parvais, Bertrand  
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    ElKashlan, Rana Y.  
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    Yu, Hao  
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    Sibaja-Hernandez, Arturo  
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    Vermeersch, Bjorn  
    Proceedings paper
    2021, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 27-29, 2021, p.247-250

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