Browsing by Author "ElKashlan, Rana Y."
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Publication A 24-31GHz Compact Low-Power Complex Impedance Sensor for Beamforming Transmitters in 22nm FD-SOI
Proceedings paper2025, 2025 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC, 2025-06-15, p.99-102Publication Advanced transistors for high frequency applications
Proceedings paper2020, 237th ECS Spring Meeting - Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.27-38Publication Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs
Journal article2020, IEEE Transactions on Electron Devices, (67) 11, p.4592-4596Publication Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs
Journal article2025, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (73) 2, p.779-788Publication Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
Proceedings paper2022, IEEE/MTT-S International Microwave Symposium (IMS), JUN 19-24, 2022, p.910-913Publication Comparison of Two SOLR Calibration Approaches for Oscilloscope-Based S>-Parameter Measurements
Proceedings paper2024, 54th European Microwave Conference (EuMC), SEP 24-26, 2024, p.952-955Publication DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Proceedings paper2021, 15th European Microwave Integrated Circuits Conference (EuMIC) / 50th European Microwave Conference (EuMC), JAN 10-15, 2021, p.89-92Publication Evolution of GaN HEMT Small-Signal parameters during semi-on state for RF/mm-wave applications
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication From 5G to 6G: will compound semiconductors make the difference?
Proceedings paper2020, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 3/11/2020, p.406-409Publication GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication III-V/III-N technologies for next generation high-capacity wireless communication
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Proceedings paper2022, 52nd IEEE European Solid-State Device Research Conference (ESSDERC), SEP 19-22, 2022, p.384-387Publication InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
Proceedings paper2024, 50th IEEE European Solid-State Electronics Research Conference (ESSERC), SEP 09-12, 2024, p.241-244Publication Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz
Proceedings paper2024, IEEE/MTT-S International Microwave Symposium (IMS), JUN 16-21, 2024, p.948-951Publication Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation
Proceedings paper2021, 16th European Microwave Integrated Circuits Conference (EuMIC), APR 03-04, 2022, p.30-33Publication Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
Journal article2023, INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, (15) 6, p.983-992Publication The revival of compound semiconductors and how they will change the world in a 5G/6G era
Meeting abstract2020, ECS PRIME: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, 4/10/2020, p.15-26Publication Transistor modelling for mm-Wave technology pathfinding
Proceedings paper2021, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 27-29, 2021, p.247-250