Browsing by Author "Fang, Wen"
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Publication Distinction between silicon and oxide traps using single-trap spectroscopy
Meeting abstract2014, E-MRS Spring Meeting Symposium H: Analytical Techniques for Precise Characterization of Nanomaterials - ALTECH, 26/05/2014Publication Impact of gate stack dielectric on intrinsic voltage gain and low frequency noise in Ge pMOSFETs
Proceedings paper2015, Advanced CMOS-Compatible Semiconductor Devices 17, 24/05/2015, p.309-314Publication Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs
; ; ; ; Luo, JunJournal article2016, IEEE Electron Device Letters, (37) 4, p.363-365Publication Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
Proceedings paper2015, International Conference on 1/f Noise and Fluctuations - ICNF, 2/06/2015, p.1-4Publication Low frequency noise characterization of GeOx passivated Germanium MOSFETs
Journal article2015, IEEE Transactions on Electron Devices, (62) 7, p.2078-2083Publication Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
Proceedings paper2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.288-293Publication Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
; Publication Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack
Proceedings paper2015, International Conference on Noise and Fluctuations - ICNF, 2/06/2015, p.1-4Publication Random telegraph noise: the key to single defect studies in nano-devices
Journal article2016, Thin Solid Films, 613, p.2-5Publication Random telegraph signal noise in advanced high performance and memory devices
; ; Zhang, WeiProceedings paper2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016, p.1-6Publication Study of DID/ID of a single charge trap in UTBOX silicon films
Proceedings paper2014, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 28/10/2014, p.1643-1645Publication Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
; Publication The assessment of border traps in high-mobility channel materials
Proceedings paper2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13, 11/10/2015, p.205-217Publication Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
Journal article2015, Physica Status Solidi C, (12) 3, p.292-298Publication Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs
Meeting abstract2014, E-MRS Spring Meeting Symposium H: Analytical Techniques for Precise Characterization of Nanomaterials - ALTECH, 26/05/2014