Browsing by Author "Fiegna, C."
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Publication Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
Proceedings paper2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024Publication Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.4B-4Publication Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 11, p.5701-5706Publication P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
Journal article2024, IEEE ELECTRON DEVICE LETTERS, (45) 9, p.1630-1633Publication Reduced self-heating by strained silicon substrate engineering
;O'Neill, Anthony ;Agaiby, Rimoon ;Olsen, Sarah ;Yang, Y. ;Hellstrom, P.-E. ;Ostling, M.Oehme, M.Journal article2008, Applied Surface Science, (254) 19, p.6182-6185Publication Reduced self-heating by strained silicon substrate engineering
;O'Neill, A. ;Olsen, S. ;Yang, Y. ;Agaiby, R. ;Hellstrom, P.E. ;Ostling, M. ;Lyutovich, K.Kasper, E.Meeting abstract2007, 5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V, 12/11/2007Publication Reduced self-heating by strained silicon substrate engineering
;O'Neill, A. ;Olsen, S. ;Yang, Y. ;Agaiby, R. ;Hellstrom, P.E ;Ostling, M. ;Lyutovich, K.Kasper, E.Meeting abstract2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007Publication Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress
Journal article2016, IEEE Transactions on Electron Devices, (63) 2, p.723-730Publication Role of the GaN-on-Si Epi-Stack on ?R-ON Caused by Back-Gating Stress
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 10, p.5203-5209Publication TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
Journal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 2, p.507-513Publication The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Journal article2022, IEEE ELECTRON DEVICE LETTERS, (43) 11, p.1846-1849