Browsing by Author "Galeti, M."
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Publication Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
Proceedings paper2010, 9th International Workshop on Low Temperature Electronics - WOLTE, 21/06/2010, p.53-55Publication Analog parameters of MuGFET devices with different source/drain engineering
Proceedings paper2012, 8th International Caribbean Conference on Devices, Circuts and Systems - ICCDCS, 14/03/2012Publication Analog performance of SOI FinFETs with different TiN gate electrode thickness
Proceedings paper2010, Microelectronics Technology and Devices - SBMICRO 2010, 6/09/2010, p.58-66Publication Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics
Journal article2011, Journal of Integrated Circuits and Systems, (6) 2, p.102-106Publication BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application
Proceedings paper2011, 37th IEEE International SOI Conference, 3/10/2011Publication Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications
Proceedings paper2010, SOI Conference, 11/10/2010, p.80-81Publication GIDL behavior in UTBOX SOI devices with high-k/metal gate stacks
Proceedings paper2012, 8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 24/01/2012, p.65-66Publication GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
Journal article2012, Solid-State Electronics, (70) 1, p.44-49Publication GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices
Proceedings paper2011, 7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 17/01/2011, p.69-70Publication Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs
Journal article2008, Semiconductor Science and Technology, 23, p.125011Publication Improved model to determine the generation lifetime in double gate SOI nMOSFETs
Proceedings paper2007, Microelectonics Technology and Devices SBMICRO 2007, 3/09/2007, p.343-351Publication Improved model to determine the generation lifetime in short channel SOI nMOSFETS
Proceedings paper2007, Silicon-on-Insulator Technology and Devices 13, 6/05/2007, p.387-392Publication Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Journal article2011, Solid-State Electronics, (62) 1, p.146-151Publication Larger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film
Proceedings paper2012, China Semiconductor Technology International Conference - CSTIC, 18/03/2012, p.25-31Publication Lateral bipolar transistor current gain behavior of MuGFET deviceswith different source/drain engineering
Proceedings paper2012, 8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 24/01/2012, p.125-126Publication SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation
Proceedings paper2011, 26th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2011, p.215-222Publication Temperature and oxide tickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Proceedings paper2005, Proceedings SBMicro: 20th Symposium on Microelectronics Technology and Devices, 5/09/2005, p.538-547Publication TiN/HfSiON for analog applications of nMuGFETs
Proceedings paper2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15, 1/05/2011, p.253-258Publication UTBOX SOI devices with high-k gate dielectric under analog performance
Proceedings paper2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.119-126