Browsing by Author "Hayama, K."
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Publication Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors
Journal article2004-04, Applied Physics Letters, 84, p.3088-3090Publication Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
Journal article2005, Journal of Materials Science: Materials in Electronics, (16) 7, p.459-462Publication Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Journal article2008, Journal of Materials Science: Materials in Electronics, (19) 2, p.161-165Publication Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes
Journal article2003, Applied Physics Letters, (82) 2, p.296-298Publication Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Proceedings paper2005, Proceedings of the International Conference on Electrical Engineering - ICEE, 10/07/2005Publication Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Journal article2004, Microelectronics Reliability, (44) 9_11, p.1721-1726Publication Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Oral presentation2008, 8th International Conference on Position Sensitive DetectorsPublication Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Journal article2009, Nuclear Instruments and Methods in Physics Research A, 604, p.258-261Publication Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Oral presentation2005, 24th Electronic Materials Symposium - EMS-24Publication Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
Proceedings paper2004, Proceedings 5th European Workshop on Radiation Effects on Components and Systems (RADECS), 22/09/2004, p.43-48Publication Device performance of 90nm nMOSFETs at liquid nitrogen temperature
;Takakura, K. ;Hayama, K. ;Ohyama, H.; ;Lee, Shih-Chung; Claeys, CorProceedings paper2004, Proceedings WOLTE-6 - 6th European Workshop on Low Temperature Electronics, 23/06/2004, p.239-243Publication Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Proceedings paper2005, 8th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 19/09/2005Publication Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Journal article2007, Physica B: Condensed Matter, 401-402, p.469-472Publication Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2125-2128Publication Effect of high-temperature electron irradiation in deep submicron MOSFETs
Oral presentation2003, 7th European Conference on Radiation and Its Effects on Components and Systems - RADECSPublication Effect of high-temperature electron irradiation in deep submicron MOSFETs
Proceedings paper2004, Proceedings 7th European Conference on Radiation and its Effects on Components and Systems, 15/09/2003, p.443-448Publication Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
Journal article2005, IEEE Trans. Nuclear Science, (52) 6, Part 1, p.2392-2397Publication Effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs
Journal article2003, Microelectronic Engineering, (66) 1_4, p.530-535Publication Effects of high-temperature electron irradiation on submicron MOSFETs
Oral presentation2002, RADECS WorkshopPublication Effects of irradiation temperature on radiation damage in electron-irradiated MOSFETs
Oral presentation2002, 8th International Conference on Electronic Materials - IUMRS-ICEM
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