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Browsing by Author "Houssiau, L."

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    Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and M2Cs2+ yields

    Brison, J.
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    Conard, Thierry  
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    Vandervorst, Wilfried  
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    Houssiau, L.
    Proceedings paper
    2004-05, Proceedings of the 14th Int. Conference on Secondary Ion Mass Spectrometry and Related Topics - SIMS XIV, 14/09/2003, p.749-753
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    Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and MCS2)-C-2 (+) yields

    Brison, J.
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    Conard, Thierry  
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    Vandervorst, Wilfried  
    ;
    Houssiau, L.
    Journal article
    2004, Applied Surface Science, 231-232, p.749-753
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    Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

    Houssiau, L.
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    Vitchev, R.G.
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    Pireaux, J.-J.
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    Conard, Thierry  
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    Bender, Hugo  
    Oral presentation
    2004, 16th International Vacuum Congress - IVC-16
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    High resolution depth profiling of future gate dielectric materials

    Bergmaier, A.
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    Dollinger, G.
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    Görgens, L.
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    Neumaier, P.
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    Bender, Hugo  
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    Brijs, Bert
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    Conard, Thierry  
    Oral presentation
    2003, E-MRS Spring Meeting Symposium I: Functional Metal-Oxides-Semiconductor Structures
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    Interfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study

    Vitchev, R.
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    Conard, Thierry  
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    Bender, Hugo  
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    Houssiau, L.
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    Pireaux, J.J.
    Oral presentation
    2004, 31st Conference on the Physics and Chemistry of Semiconductor Interfaces
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    Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

    Houssiau, L.
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    Vitchev, R.G.
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    Pireaux, J.J.
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    Conard, Thierry  
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    Bender, Hugo  
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    Richard, Olivier  
    Proceedings paper
    2003, AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.36-38
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    Physical characterization of mixed HfAlOx layers by complementary analysis techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
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    Petry, Jasmine
    Journal article
    2004, Materials Science and Engineering B, 109, p.60-63
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    Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
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    Petry, Jasmine
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.223-232
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    Purity of epitaxial cubic BoronNitride films on (001) Diamond - A prerequisite for their doping

    Yin, H.
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    Boyen, H.G.
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    Ziemann, P.
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    Dohuard, B.
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    Houssiau, L.
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    Renaux, F.
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    Hecq, M.
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    Bittencourt, C.
    Journal article
    2008, Diamond and Related Materials, (17) 3, p.276-282
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    Tof-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides

    Houssiau, L.
    ;
    Vitchev, R.G.
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    Conard, Thierry  
    ;
    Vandervorst, Wilfried  
    ;
    Bender, Hugo  
    Oral presentation
    2003, International Conference on Secondary Ion Mass Spectrometry - SIMS XIV
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    ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides

    Houssiau, L.
    ;
    Vitchev, R.G.
    ;
    Conard, Thierry  
    ;
    Vandervorst, Wilfried  
    ;
    Bender, Hugo  
    Journal article
    2004, Applied Surface Science, 231-232, p.585-589

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