Browsing by Author "Kandaswamy, Prem Kumar"

AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs

Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements

Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures

Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study

Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics

GaN-on-Si process defect detection and analysis for HB-LEDs and power devices

Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates

Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates

Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE

Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate

MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Stress management techniques for GaN growth on 200mm silicon wafers for High power applications

Study on the dispersion control of AlGaN/GaN buffers grown by MOCVD on 200 mm Si (111)

Surface and interface morphology optimization in MOCVD growth of DH-HEMT structures on 200 mm Si(111) substrates

The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion