Browsing by Author "Kar, Gouri Sankar"
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Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication 3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation
Proceedings paper2025, 2025 Conference on Metrology Inspection and Process Control-Annual, 2025-02-24, p.1342612-1Publication A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Meeting abstract2016, MMM Intermag, 11/01/2016Publication A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Journal article2022-07-01, THIN SOLID FILMS, (753) /, p.139278Publication A comparative analysis on the impact of bank contention in STT-MRAM and SRAM based LLCs
Proceedings paper2019, International Conference on Computer Design - ICCD, 17/11/2019, p.1-9Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Journal article2020, ECS Journal of Solid State Science and Technology, (9) 4, p.044006-1-044006-7Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Proceedings paper2019, Semiconductors, Dielectrics, and Metals for Nanoelectronics 17, 13/10/2019, p.45-55Publication A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 4, p.1808-1814Publication A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication A smaller, faster and more energy-efficient complementary STT-MRAM cell uses three transistors and a ground grid: more is actually less
Journal article2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (25) 4, p.1204-1214Publication A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications
Journal article2021, ELECTRONICS, (10) 19, p.2384Publication Advanced characterization of 2D materials using SEM image processing and machine learning
Proceedings paper2024, Conference on Metrology, Inspection, and Process Control XXXVIII, FEB 26-29, 2024, p.129550XPublication All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2116-2122Publication Analysis of complementary RRAM switching
Journal article2012, IEEE Electron Device Letters, (33) 8, p.1186-1188Publication Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system
Journal article2017, Journal of Applied Physics, (121) 11, p.113904Publication Asymmetry and switching phenomenology in TiN(Al2O3)\HfO2\Hf systems
Journal article2012-08, ECS Solid State Letters, (1) 4, p.P63-P65Publication Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.79-82Publication Back-hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
Journal article2020, Physical Review B, (102) 18, p.184406