Browsing by Author "Klostermann, Ulrich"
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Publication Application of an inverse Mack model for negative tone development simulation
Publication Calibration and verification of a stochastic model for EUV resist
Proceedings paper2012, Extreme Ultraviolet (EUV) Lithography III, 12/02/2012, p.83221DPublication Calibration of physical resist models: methods, usability, and predictive power
Publication Experimental characterization of NTD rResist shrinkage
Proceedings paper2017, Optical Microlithography XXX, 26/02/2017, p.101470FPublication Experimental validation of rigorous, 3D profile models for negative-tone develop resists
Publication Experimental validation of stochastic modeling for negative-tone develop EUV resist
Proceedings paper2015, Extreme Ultraviolet (EUV) Lithography VI, 22/02/2015, p.942223Publication Impact of EUV off-axis illumination on full field imaging performance for NXE:3100
Proceedings paper2011, International Symposium on Extreme Ultraviolet Lithography - EUVL, 17/10/2011Publication Impact of mask three dimensional effects on resist-model calibration
Journal article2009, Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3 Letters), (8) 3, p.30501Publication Prediction of EUV stochastic microbridge probabilities by lithography simulations
Proceedings paper2020, Extreme Ultraviolet (EUV) Lithography XI, 23/02/2020, p.113230KPublication Source-mask optimization incorporating a physical resist model and manufacturability constraints