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Browsing by Author "Kluth, Jon"

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    Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications

    Caymax, Matty  
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    Brijs, Bert
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    Carter, Richard
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    Claes, Martine  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2002, Atomic Layer Deposition Conference - ALD
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    Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon

    Van Elshocht, Sven  
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    Caymax, Matty  
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    De Gendt, Stefan  
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    Conard, Thierry  
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    Petry, Jasmine
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.197-202
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    Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition

    Tsai, Wilman
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    Chen, Jian
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    Carter, Richard
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    Cartier, Eduard
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    Kluth, Jon
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    Richard, Olivier  
    Proceedings paper
    2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760
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    Issues, achievements and challenges towards integration of high-k dielectrics

    Caymax, Matty  
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    De Gendt, Stefan  
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    Vandervorst, Wilfried  
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    Heyns, Marc  
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    Bender, Hugo  
    Proceedings paper
    2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?
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    Physical characterization of high-k gate stacks deposited on HF-last surfaces

    Bender, Hugo  
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    Conard, Thierry  
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    Nohira, Hiroshi
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    Pétry, Jasmine
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    Richard, Olivier  
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    Zhao, Chao
    Proceedings paper
    2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92
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    Scaling of high-k dielectrics towards sub-1nm EOT

    Heyns, Marc  
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    Beckx, Stephan  
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    Bender, Hugo  
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    Blomme, Pieter  
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    Boullart, Werner  
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    Brijs, Bert
    Proceedings paper
    2003, IEEE International Symposium on VLSI Technology, Systems, and Applications, 23/04/2003, p.251-254
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    The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration

    Kaushik, Vidya
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    De Gendt, Stefan  
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    Carter, Richard
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    Claes, Martine  
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    Röhr, Erika
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    Pantisano, Luigi
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.335-340

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