Browsing by Author "Kohen, David"
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Publication Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Meeting abstract2016-11, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.20-21Publication Electrical properties of III-V/oxide interfaces
Proceedings paper2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.375-386Publication Electrical properties of III-V/oxide interfaces
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.1337Publication Enhanced B doping in CVD-grown GeSn:B using B $d-doping layers
Journal article2018-02, Journal of Crystal Growth, 483, p.285-290Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial GeSn: impact of process conditions on material quality
Meeting abstract2018-05, Joint ISTDM/ICSI Conference, 27/05/2018, p.195-196Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Oral presentation2019, talk at Nagoya UniversityPublication Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices
Meeting abstract2019-09, 2019 Compound Semiconductor Week (CSW), 19/05/2019, p.1-2Publication Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Meeting abstract2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.214-215Publication Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Proceedings paper2019-10, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.7-10Publication Epitaxial growth schemes for fin and Gate All Around devices
Meeting abstract2018, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 23/02/2018Publication Epitaxial growth schemes for Fin and Gate-All-Around devices
Meeting abstract2018-05, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018, p.65-66Publication Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Publication Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Meeting abstract2018, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018Publication Gallium-doped SiGe and Ge via MO-RPCVD epitaxy
; ; Publication Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
Publication Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Meeting abstract2019, 2019 E-MRS Fall Meeting and Exhibit, Symposium B: Integration of advanced materials on silicon: from classical to quantum applic, 16/09/2019Publication Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Proceedings paper2018, 50th Solid State Devices and Materials Conference - SSDM, 9/09/2018, p.179-180Publication Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs
Meeting abstract2017, e-MRS Fall Meeting, 18/09/2017, p.M6.4