Browsing by Author "Kundu, Shreya"
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Publication A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications
Journal article2021, ELECTRONICS, (10) 19, p.2384Publication Alternative metals: from ab initio screening to calibrated narrow line models
Proceedings paper2018, IEEE International Interconnect Technology Conference - IITC, 4/06/2018, p.154-156Publication Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.79-82Publication Co active electrode enhances CBRAM performance and scaling potential
Meeting abstract2019, IEEE ELectron Devices Meeting - IEDM, 7/12/2019, p.851-854Publication Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Proceedings paper2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024Publication Deterministic and field-free voltage-controlled MRAM for high performance and low power applications
Proceedings paper2020, IEEE Symposium on VLSI Technology and Circuits, JUN 15-19, 2020Publication Diffusion control in top-pinned STT-MRAM devices
Meeting abstract2019, 2019 JOINT MMM-INTERMAG Conference, 14/01/2019, p.FF-10Publication Direct metal nanowire patterning using ion beam etch
Meeting abstract2017, AVS 64th International Symposium and Exhibition, 29/10/2017, p.PS-WeM13Publication Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications
Journal article2024, IEEE ELECTRON DEVICE LETTERS, (45) 10, p.2033-2035Publication Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Oral presentation2017, Intermag 2017Publication Double torque perpendicular STT-MRAM devices for low power IoT and edge computing
Oral presentation2021, Intermag 2021Publication Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution
; ; ; ; Publication Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Journal article2021, SOLID-STATE ELECTRONICS, 184, p.108058Publication Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
; ; ; Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.420-423Publication Enabling BEOL compatibility in top-pinned STT-MRAM
Meeting abstract2019, York-Tohoku-Kaiserslautern Research Symposium on "New-Concept Spintronics Devices", 12/06/2019, p.37Publication Engineering and stack optimization of Cu-based selector devices for low power SCM applications
Proceedings paper2018, IEEE International Memory Workshop - IMW, 13/05/2018, p.1-4Publication Evidence of Heat-Assisted Atomic Migration in GeSe Self-Selecting Memory at High Operating Current Density
Journal article2024, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (18) 10, p.Art. 2300415Publication Evidence of magnetostrictive effects on STT-MRAM performances by atomistic and spin modeling
Proceedings paper2018, IEEE Electron Devices Meeting - IEDM, 1/12/2018, p.942-945Publication Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory Application
Journal article2022-11, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 11, p.6106-6112Publication Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Proceedings paper2021, 26th Silicon Nanoelectronics Workshop, JUN 13, 2021, p.21-22