Browsing by Author "Lander, Rob"
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Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
; ; Publication A practical baseline process for advanced CMOS devices research
Proceedings paper2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30Publication Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Proceedings paper2009, Silicon-on-Insulator Technology and Devices 14, 24/05/2009, p.45-54Publication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Application of HCl etch in the production of novel devices
Meeting abstract2008, 213th ECS Meeting, 18/05/2008, p.647Publication Application of HCl gas phase etch in the production of novel devices
Proceedings paper2008-05, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS. 4: New Materials, Processes, and Equipment, 18/05/2008, p.329-335Publication Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Proceedings paper2008, IEEE International Electron Devices Meeting - IEDM, 15/12/2008, p.535-538Publication Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Proceedings paper2009-10, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.1040-1041Publication Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
Proceedings paper2005, Technical Digest International Electronic Devices Meeting - IEDM, 5/12/2005, p.36-5-1-36-5-4Publication Drift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3
Journal article2000, J. Appl. Physics, (88) 4, p.2016-2023Publication Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Publication First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.241-244Publication Gatestacks for scalable high-performance FinFETs
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.681-684Publication Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.110-111Publication Improved fin width scaling in fully-depleted FinFETs
; ; ; ; Rooyackers, RitaProceedings paper2008, 38th European Sooid-State Device Research Conference - ESSDERC, 16/09/2008, p.334-337Publication Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study
Proceedings paper2004, Proceedings of the International Symposium on Semiconductor Manufacturing - ISSM, 27/09/2004, p.53-56Publication Ion implantation for low-resistive source/drain contacts in FinFET devices
Proceedings paper2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E02-01Publication Junction architecture for planar devices
Proceedings paper2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.351-364Publication Matching performance of FinFET devices with fin widths down to 10nm
Journal article2009, IEEE Electron Device Letters, (30) 12, p.1374-1376Publication Material aspects and challenges for SOI FinFET integration
Proceedings paper2008, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment, 18/05/2008, p.223-234