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Browsing by Author "Larcher, Luca"

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    A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations

    Padovani, Andrea
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    Arreghini, Antonio  
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    Vandelli, Luca
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    Larcher, Luca
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    Van den Bosch, Geert  
    Journal article
    2011, IEEE Transactions on Electron Devices, (58) 9, p.3147-3155
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    A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements

    Padovani, Andrea
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    Kaczer, Ben  
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    Pesic, Milan
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    Belmonte, Attilio  
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    Popovici, Mihaela Ioana  
    Journal article
    2019, IEEE Transactions on Electron Devices, (66) 4, p.1892-1998
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    Defect spectroscopy from electrical measurements: a simulation based technique

    Larcher, Luca
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    Padovani, Andrea
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    Pramanik, Dipankar
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    Kaczer, Ben  
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    Palumbo, Felix
    Proceedings paper
    2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM, 13/03/2018, p.145-147
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    Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors

    Slassi, Amine
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    Medondjio, Linda-Sheila
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    Padovani, Andrea
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    Tavanti, Francesco
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    He, Xu
    Journal article
    2023, ADVANCED ELECTRONIC MATERIALS, (9) 4, p.Art. 2201224
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    Electron trapping in ferroelectric HfO2

    Izmailov, Roman A.
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    Strand, Jack W.
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    Larcher, Luca
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    Shluger, Alexander L.
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    Afanas'ev, Valeri V.
    Journal article
    2021, PHYSICAL REVIEW MATERIALS, (5) 3, p.034415
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    Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

    Padovani, Andrea
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    Arreghini, Antonio  
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    Vandelli, Luca
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    Larcher, Luca
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    Van den Bosch, Geert  
    Journal article
    2012, Applied Physics Letters, (101) 5, p.53505
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    Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories

    Suhane, Amit
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    Arreghini, Antonio  
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    Van den Bosch, Geert  
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    Vandelli, Luca
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    Padovani, Andrea
    Journal article
    2010, IEEE Electron Device Letters, (31) 9, p.936-938
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    Extraction of the defect distributions in DRAM capacitor using I–V and C–V sensitivity maps

    Sereni, Gabriele
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    Larcher, Luca
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    Kaczer, Ben  
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    Popovici, Mihaela Ioana  
    Journal article
    2016, IEEE Electron Device Letters, (37) 10, p.1280-1283
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    Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors

    Popovici, Mihaela Ioana  
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    Kaczer, Ben  
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    Afanasiev, Valeri  
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    Sereni, Gabriele
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    Larcher, Luca
    Journal article
    2016, Physica Status Solidi. Rapid Research Letters, (10) 5, p.420-425
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    Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization

    Puglisi, Francesco Maria
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    Costantini, Felipe
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    Kaczer, Ben  
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    Larcher, Luca
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    Pavan, Paolo
    Proceedings paper
    2016, 46th European Solid-State Device Research Conference - ESSDERC, 12/09/2016, p.252-255
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    Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability

    Vandelli, Luca
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    Arreghini, Antonio  
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    Padovani, Andrea
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    Larcher, Luca
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    Van den Bosch, Geert  
    Proceedings paper
    2010, 48th Annual IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.731-737
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    Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 resistive random access memory

    Puglisi, F.M.
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    Celano, Umberto  
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    Padovani, A.
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    Vandervorst, Wilfried  
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    Larcher, Luca
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    Pavan, P.
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.PM-8.1-PM-8.5
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    SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling

    Kaczer, Ben  
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    Larcher, Luca
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    Vandelli, Luca
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    Resinger, Hans
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    Popovici, Mihaela Ioana  
    Proceedings paper
    2014, IEEE Semiconductor Interfaces Specialist Conference - SISC, 10/12/2014
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    SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling

    Kaczer, Ben  
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    Larcher, Luca
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    Vandelli, Luca
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    Reisinger, Hans
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    Popovici, Mihaela Ioana  
    Journal article
    2015, Microelectronic Engineering, 147, p.126-129
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    Standards for the Characterization of Endurance in Resistive Switching Devices

    Lanza, Mario
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    Waser, Rainer
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    Ielmini, Daniele
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    Yang, J. Joshua
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    Goux, Ludovic  
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    Sune, Jordi
    Journal article review
    2021, ACS NANO, (15) 11, p.17214-17231
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    Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers

    Padovani, Andrea
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    Pesic, Milan
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    Anik Kumar, Mondol
    ;
    Blomme, Pieter  
    ;
    Subirats, Alexandre
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.7C.1

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