Browsing by Author "Larcher, Luca"
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Publication A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Journal article2011, IEEE Transactions on Electron Devices, (58) 9, p.3147-3155Publication A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Journal article2019, IEEE Transactions on Electron Devices, (66) 4, p.1892-1998Publication Defect spectroscopy from electrical measurements: a simulation based technique
Proceedings paper2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM, 13/03/2018, p.145-147Publication Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors
;Slassi, Amine ;Medondjio, Linda-Sheila ;Padovani, Andrea ;Tavanti, FrancescoHe, XuJournal article2023, ADVANCED ELECTRONIC MATERIALS, (9) 4, p.Art. 2201224Publication Electron trapping in ferroelectric HfO2
;Izmailov, Roman A. ;Strand, Jack W. ;Larcher, Luca ;Shluger, Alexander L.Afanas'ev, Valeri V.Journal article2021, PHYSICAL REVIEW MATERIALS, (5) 3, p.034415Publication Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Journal article2012, Applied Physics Letters, (101) 5, p.53505Publication Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Journal article2010, IEEE Electron Device Letters, (31) 9, p.936-938Publication Extraction of the defect distributions in DRAM capacitor using I–V and C–V sensitivity maps
Journal article2016, IEEE Electron Device Letters, (37) 10, p.1280-1283Publication Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors
Journal article2016, Physica Status Solidi. Rapid Research Letters, (10) 5, p.420-425Publication Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization
Proceedings paper2016, 46th European Solid-State Device Research Conference - ESSDERC, 12/09/2016, p.252-255Publication Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability
Proceedings paper2010, 48th Annual IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.731-737Publication Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 resistive random access memory
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.PM-8.1-PM-8.5Publication SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling
Proceedings paper2014, IEEE Semiconductor Interfaces Specialist Conference - SISC, 10/12/2014Publication SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling
Journal article2015, Microelectronic Engineering, 147, p.126-129Publication Standards for the Characterization of Endurance in Resistive Switching Devices
Journal article review2021, ACS NANO, (15) 11, p.17214-17231Publication Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.7C.1