Browsing by Author "Loo, Roger"
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Publication 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Proceedings paper2014, Symposium on VLSI Technology, 9/06/2014, p.138-139Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication 200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
Meeting abstract2012-06, 6th International Silicon Technology and Device Meeting, 4/06/2012, p.106-107Publication 200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD
; Publication 25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.194-195Publication 3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation
Proceedings paper2025, 2025 Conference on Metrology Inspection and Process Control-Annual, 2025-02-24, p.1342612-1Publication 50 nm high performance strained Si/SiGe pMOS devices with multiple quantum wells
Proceedings paper2002, VLSI Nanoelectronics Workshop, 9/06/2002, p.15-16Publication 50Gb/s C-band GeSi waveguide electro-absorption modulator
Proceedings paper2016, Optical Fiber Communications Conference - OFC, 20/03/2016, p.Tu3D.7Publication 60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator
Proceedings paper2021, Optical Fiber Communications Conference and Exhibition (OFC), JUN 06-11, 2021Publication 64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform
Journal article2025-MAR 15, JOURNAL OF LIGHTWAVE TECHNOLOGY, (43) 6, p.2794-2802Publication 85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.163-164Publication 8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.181-182Publication A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.436-439Publication A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Proceedings paper2000, Proceedings Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 24/09/2000, p.106-109Publication A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Proceedings paper2016-06, IEEE Symposium on VLSI Technology, 13/06/2016, p.34-35Publication A 50 nm vertical Si0.70/Ge0.30/Si0.85/Ge0.15 pMOSFET with an oxide/nitride gate dielectric
; ; ; ; Publication A 50nm high-k poly silicon gate stack with a buried SiGe channel
Proceedings paper2007, International Symposium on VLSI Technology, Systems and Applications, 23/04/2007Publication A 70nm vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity for VLSI applications
; ; ; ; ; Van Rossum, MarcProceedings paper1999, Silicon Nanoelectronics Workshop Abstracts, 12/06/1999Publication A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Journal article2020-05, Journal of Applied Physics, (127) 19, p.195703Publication A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
; ; ; ; ; Blanpain, BartJournal article2009-03, Applied Physics Letters, (94) 10, p.102115